Nano-device simulation from an atomistic view

Mori, Nobuya; Mil’nikov, Gennady; Minari, Hideki; Kamakura, Yoshinari; Zushi, Tomofumi; Watanabe, Takanobu; Uematsu, Masashi; Itoh, Kohei M.; Uno, Shigeyasu; Tsuchiya, Hiroyuki

doi:10.1109/iedm.2013.6724564

Cited by 12 publications

(5 citation statements)

References 15 publications

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“…The quantum-mechanically corrected transport model is essential as the physics of tunneling plays a significant role when the L eff (effective channel length) of the device is in the sub-10 nm regime [30]. This transport model can be achieved by direct solutions to the multidimensional Schrödinger equation [12,[31][32][33]. Shockley-Read-Hall model is employed to describe carrier recombination and generation [34].…”

Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors

et al. 2020

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Using physics-based predictive technology CAD simulations, we show the improvements possible in device performance via strain engineering in vertically-stacked horizontal gate-all-around nanosheet Field-Effect transistors (NSFETs), which may outperform conventional FinFETs beyond 7 nm technology node. Effects of mechanical strain on NSFET variability is reported for the first time. We present a novel simulation approach for the analyses of random dopant fluctuation (RDF) and metal grain granularity (MGG) dependent variability in nanosheet transistors. The study encompasses topography simulation, which realistically reproduces a reported experimental nanosheet transistor. Device simulations are based on sub-band Boltzmann transport with 2D Schrödinger equation in the nanosheet cross-section and 1D Boltzmann transport along the nanosheet channel. The effects of mechanical stress and geometry dependence of the electrical characteristics are also reported. Critical design issues are outlined.

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Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors

et al. 2020

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“…ate-all-around (GAA) silicon (Si) nanowire (NW) metaloxide semiconductor field-effect transistors (MOSFETs) with high-/metal-gate technologies are promising devices for emerging technological nodes due to their excellent electrical characteristics [1][2][3][4][5]. However, the work-function fluctuation (WKF)-induced device variability has been considered as a major fluctuation source due to different probabilities (p) of WK resulting from random orientations of nanosized metal grains and different grain sizes (GS) of metal gate [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods

Sung

Yang

2021

IEEE J. Electron Devices Soc.

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“…As semiconductor device simulation methods that accurately incorporate quantum effects, the quantum Monte Carlo method [11][12][13] that handles carriers as particles, and the nonequilibrium Green function method [14][15][16][17][18] that handles carriers as fluids have been proposed. On the other hand, methods such as Van Dort 19) and the density gradient method [20][21][22][23][24][25] are also proposed to incorporate quantum effects into the semiclassical device simulator based on the drift diffusion approximation.…”

Section: Introductionmentioning

confidence: 99%

Novel multi-flux semiconductor device simulation method applied to 2DEG analyzes

Fukuda

Hattori

Asai

et al. 2020

Jpn. J. Appl. Phys.

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A multi-flux method for semiconductor device simulation is proposed. In this method, the carrier is treated as fluid, and the current continuity equation is divided into several fluid equations. By dividing the electron current into several separate electron currents, various applications of device simulation might be enabled. This paper describes an application in which the electron current is divided into several subbands in the MOS inversion layer, and multiple electron current continuity equations for each subband are solved. For the inversion layer of the two-dimensional device simulation with the drift diffusion approximation, the energy height for each subband is obtained by the Poisson–Schrödinger method, and multiple current continuity equations corresponding to each subband are solved in order to study the quantum effects more accurately.

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Nano-device simulation from an atomistic view

Cited by 12 publications

References 15 publications

Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors

Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors

Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods

Novel multi-flux semiconductor device simulation method applied to 2DEG analyzes

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