Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching

Kuball, Martin; Morrissey, F; Benyoucef, M.; Harrison, I.; Korakakis, D.; Foxon, C.T.

doi:10.1002/(sici)1521-396x(199911)176:1<355::aid-pssa355>3.0.co;2-i

Cited by 25 publications

(10 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…19 Choosing the area of interest, without changing the cantilever width and length, the surfaces of the cantilevers are exposed to impinging Ga + ions in the FIB altering the surface morphology in different directions ( Fig. 2; over the whole surface area of the resonator with dimensions given in Table I).…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Influence of surface modification on the quality factor of microresonators

2012

View full text Add to dashboard Cite

Influence of surface modification on the quality factor of microresonators Ergincan, O.; Palasantzas, G.; Kooi, B. J. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Noise measurements were performed to determine the quality factor (Q) as a function of gas pressure P for microresonators in cantilever form with systematically modified surfaces. In the free-molecular regime, which is dominated by internal energy losses, Q was substantially decreased by more than an order of magnitude with increasing surface roughness. At higher pressures, within the molecular regime, Q showed the typical inverse linear dependence on pressure Q ∼ P −1 . However, in the molecular regime the Q factor also showed a strong dependence on surface morphology as indicated by surface area calculations using measured roughness data and compared to those obtained from Q ∼ P −1 plots.

show abstract

Section: Methodsmentioning

confidence: 99%

“…Moreover, this FIB treatment was performed in such a way that the contamination and defect formation was minimized. 19 Varying the morphology with wavelike modulation parallel or perpendicular to the length of the cantilever affects the reduction of the Q factor.…”

Section: Methodsmentioning

confidence: 99%

Influence of surface modification on the quality factor of microresonators

2012

View full text Add to dashboard Cite

show abstract

“…Variation of q is achieved in backscattering geometry by tilting the sample with respect to the laser beam by q ¼ 0 , q ¼ 45 (on a bevel edge obtained by focused ion beam etching [3]), and q ¼ 90 . In our experiment performed in off-resonant conditions, the control of momentum transfer q from the incident and scattered photons is ensured by the scattering geometry.…”

Section: Angular Dispersion Of Extraordinary Phonons In a Gan-aln Supmentioning

confidence: 99%

Inelastic Light Scattering by Phonons in Hexagonal GaN-AlN Nanostructures

Gleize

Demangeot

Frandon

et al. 2001

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

Two selected examples have been chosen to illustrate the ability of non-resonant Raman scattering to probe phonons in hexagonal GaN-AlN artificial structures. The angular dispersion of polar phonons is investigated in a long period GaN-AlN superlattice and compared with the results of calculations based on a dielectric continuum model. On the other hand, the Raman signature of the self-assembled GaN quantum dots and of the AlN spacers of a multi-layered structure is used to determine the strain field in the stucture. The dots are shown to be fully strained on the AlN lattice parameter while the spacers exhibit on the average a slight tensile strain.

show abstract

“…The side walls are nearly vertical, illustrating the high quality of the fabricated pillars. The use of low beam currents is essential to achieve a good fabrication quality using FIB [7]: the diameter of the gallium ion beam used for the milling decreases with decreasing current due to a reduced ion-ion interaction in the beam.…”

Section: Resultsmentioning

confidence: 99%

“…Focused ion beam (FIB) etching is one of the most promising techniques for the fine patterning of III-V nitrides, however, only basic etching parameters have been investigated so far [5,6,7]. Alternatively, small nitride structures can be fabricated by selective area growth [8].…”

Section: Introductionmentioning

confidence: 99%

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

et al. 1999

Self Cite

View full text Add to dashboard Cite

We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

show abstract

Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching

Cited by 25 publications

References 7 publications

Influence of surface modification on the quality factor of microresonators

Influence of surface modification on the quality factor of microresonators

Inelastic Light Scattering by Phonons in Hexagonal GaN-AlN Nanostructures

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

Contact Info

Product

Resources

About