Nano-floating gate organic memory devices utilizing Ag–Cu nanoparticles embedded in PVA-PAA-glycerol polymer

Ayesh, Ahmad I.; Qadri, Shahnaz; Baboo, V.J.; Haik, Mohammad Y.; Haik, Yousef

doi:10.1016/j.synthmet.2013.09.018

Cited by 32 publications

(16 citation statements)

References 24 publications

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“…This behavior, similar to that of p-type semiconductors, results from ion drift or polarization. Previous studies 37,38 suggest that the clockwise hysteresis results because Au nanoparticles are charged by electrons injected at the accumulation region where negative voltage is applied from the top electrode. However, if electrons were injected through the SiO 2 layer, the C-V curves would show counterclockwise hysteresis.…”

Section: Devices With Storage Elementsmentioning

confidence: 97%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal-insulator-semiconductor structure. Au nanoparticles were produced by sputtering and inertgas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO 2 )/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance-voltage (C-V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

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Section: Devices With Storage Elementsmentioning

confidence: 97%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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“…Thus, the nanoparticles can be retrieved from the membranes and utilized for further application cycles . Accordingly, PVA‐based membranes can be used for multiple cycles of flexible device applications …”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of poly(vinyl alcohol)—Glycerol—Spinel ferrites flexible membranes

Shaheen

Haija

Chamakh

et al. 2019

J of Applied Polymer Sci

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Polymer membranes of ferrites nanoparticles, glycerol, and poly(vinyl alcohol) (PVA) were fabricated using a solution casting method. Spinel ferrites nanoparticles, CuFe2O4 or ZnFe2O4, and glycerol were used as dopants to control the membranes' electrical conductivity. The morphology, composition, and interaction between PVA and the dopants were investigated byscanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), differentialscanning calorimeter (DSC), and thermal gravimetric analysis (TGA). Electrical characterization of the membranes was conducted by impedance spectroscopy using frequencies between 1 and 106 Hz and variable temperatures. The results revealed a negative temperature coefficient of the resistance of the membranes. Additionally, membranes with ZnFe2O4 nanoparticles exhibit higher electrical impedance than those with CuFe2O4 nanoparticles. Therefore, electrical conductivity could be controlled using a suitable dopant's composition and concentration. The membranes presented in this study exhibit semiconducting properties, thus, they have potentials to be utilized in multiple applications including the flexible organic‐based device. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020, 137, 48821.

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“…LPE-G) whose IE is sitting off the polymer band-gap can thus be related to works where graphene and reduced graphene oxide has been extensively studied as floating gate, 30 to build memories 31, 32 and nano-memories. 33 Since continuous films (or aggregates forming continuous percolation pathways) of graphene nano-flakes behave as a semimetallic material 34 our system can also be benchmarked to works where deposited metallic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 14 nanoparticles on a surface were proved to act as floating gate 25,35,36 and to be suitable for building memory device. 37 The above-mentioned approaches require the use of a dielectric layer between the nanoparticles and the active material, because direct contact between them would generate charge trapping and give raise to non-functioning devices.…”

mentioning

confidence: 99%

A Multifunctional Polymer-Graphene Thin-Film Transistor with Tunable Transport Regimes

et al. 2015

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Here we describe a strategy to fabricate multifunctional graphene-polymer hybrid thin-film transistors (PG-TFT) whose transport properties are tunable by varying the deposition conditions of liquid-phase exfoliated graphene (LPE-G) dispersions onto a dielectric surface and via thermal annealing post-treatments. In particular, the ionization energy (IE) of the LPE-G drop-cast on SiO2 can be finely adjusted prior to polymer deposition via thermal annealing in air environment, exhibiting values gradually changing from 4.8 eV up to 5.7 eV. Such a tunable graphene's IE determines dramatically different electronic interactions between the LPE-G and the semiconducting polymer (p- or n-type) sitting on its top, leading to devices where the output current of the PG-TFT can be operated from being completely turned off up to modulable. In fact upon increasing the surface coverage of graphene nanoflakes on the SiO2 the charge transport properties within the top polymer layer are modified from being semiconducting up to truly conductive (graphite-like). Significantly, when the IE of LPE-G is outside the polymer band gap, the PG-TFT can operate as a multifunctional three terminal switch (transistor) and/or memory device featuring high number of erase-write cycles. Our PG-TFT, based on a fine energy level engineering, represents a memory device operating without the need of a dielectric layer separating a floating gate from the active channel.

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Nano-floating gate organic memory devices utilizing Ag–Cu nanoparticles embedded in PVA-PAA-glycerol polymer

Cited by 32 publications

References 24 publications

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Fabrication and characterization of poly(vinyl alcohol)—Glycerol—Spinel ferrites flexible membranes

A Multifunctional Polymer-Graphene Thin-Film Transistor with Tunable Transport Regimes

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