Nano-Spintronics with Lateral Quantum Dots

Valence holes as Luttinger spinor based qubits in quantum dots

“…[1][2][3][4][5][6] In III-V semiconductor quantum dots, such as GaAs, spins of conduction-band electrons couple to nuclear spins of the host material and suffer decoherence due to hyperfine interactions. However, valence hole states are built from atomic p-type orbitals, which are expected to minimize the hyperfine interaction between the hole and surrounding nuclear spins.…”

Charged-impurity-induced dephasing of a voltage-controlled coded qubit based on electron spin in a triple quantum dot

“…The scattering wave vectors K's which lie outside the Brillouin zone ͓−2 / 3,2 / 3͔ are translated back by reciprocal-lattice vectors ͑2 / 3͒n. This reduces the 9 ϫ 9, S z =− 1 2 , Hamiltonian matrix written in the configuration basis ͕͉K i ͖͘ to a block-diagonal matrix composed of three 3 ϫ 3 matrices, each of them corresponding to a value of K =−1,0,1, respectively. It follows that the eigenstates of the Hamiltonian have well defined wave vector K and can be written as a linear combination of only configurations with the same K : Figure 1 shows the energy levels of the coded qubit in the absence of impurity.…”

“…There is currently an interest in exploiting electron spin for nanospintronic 1 and quantum information processings. [2][3][4][5] The advantages of electron-spin-based qubits are long coherence times 6 and solid-state implementation with wellestablished scalable semiconductor technology.…”

Quantum circuits based on coded qubits encoded in chirality of electron spin complexes in triple quantum dots

“…There is currently interest in exploiting electron spins for nanospintronic 1 and quantum information processing. [2][3][4][5] This is partly motivated by electron spin long coherence times 6 and availability of scalable semiconductor technology.…”