Nanocoral PbS Films Schottky Solar Cell

Obaid, Asma; Dihe, Alaa Ahmed; Salih, Bashar M.; Hassan, Z.; Al‐Douri, Y.; Bououdina, M.

doi:10.4028/www.scientific.net/amr.925.605

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…This type (PbS) of semiconductor material is mostly prepared in the form of nanostructure [3,4]. Lead sulphide (PbS) is an important direct narrow gap semiconductor material with an approximate energy gap of 0.4 eV at 300K and a relatively large excitation Bohr radius of 18nm [5]. In this category, PbS is a IV-VI compound semiconductor which has a cubic lattice with unit cell face center cubic.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition to investigate structural and optical properties of lead sulfide nanostructure

Mohammed

Abbas

Aadim

2020

IJP

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In this work, the structure properties of nano Lead sulfide PbS thin films are studied. Thin samples were prepared by pulse laser deposition and deposited on glass substrates at wavelength 1064nm wavelength with a various laser energies (200,300,400,500)nm. The study of atomic force microscope (AFM) and X-ray diffraction as well as the effect of changing the laser energy on the structural properties has been studied. It has been observed that the membrane formed is of the polycrystalline type and the predominant phase is the plane (111) and (200). The minimum grain size obtained was 16.5 nm at a laser energy about 200 mJ. The results showed that thin films of average granular sizes (75 nm) could be prepared.As for the optical properties, the effect of changing the laser energy on them was studied, and it was found that they have direct allowed transitions in the range of (1.55 to 2.45) eV

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Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition to investigate structural and optical properties of lead sulfide nanostructure

Mohammed

Abbas

Aadim

2020

IJP

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“…Jahromi et al proposed and fabricated a highly sensitive solid-state acetone sensor based on lead sulfide nanosheets [15]. Furthermore, it can also be utilized in light-emitting diode [16,17], Optical waveguides [18], optical fiber amplifiers [19], photon detectors [20,21], IR detectors [22], display devices [23], and solar cells [24][25][26]. PbS nanocrystals with various morphologies such as nanoparticles [27], quantum dots [28], thin film [29], nanosheet [15], hollow spheres [30], wires [31,32], rods [33,34], tubes [34], hierarchical structures [35] and star-like structures [36] have also been synthesized nowadays with gas, liquid and solid approaches.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of well-ordered PbS nanowires in aluminum oxide template by sulfurization and vacuum injection molding processes

et al. 2021

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Lead (Pb) nanowire arrays were fabricated with anodic aluminum oxide (AAO) templates of 30, 100 and 300 nm in pore diameters. Through vacuum injection molding process, Pb/AAO composite was obtained, and lead sulfide (PbS) could further be synthesized after exposing to sulfur gas. AAO templates with different pore sizes were fabricated by using pure aluminum in a two-step anodization. Three types of solutions, which are 10 vol% sulfuric acid, 3 wt% oxalic acid and 1 vol% phosphoric acid, were adopted to achieve AAO of various pore sizes. Different sulfurization temperatures and time spans were applied for studying on the formation mechanism of PbS. Finally, the morphology, composition, structure and elements distribution of the as-prepared Pb and PbS nanowires were confirmed through the use of scanning electron microscopy, energy dispersive x-ray spectroscopy, element-mapping, x-ray diffraction and transmission electron microscopy analysis. The results indicated that Pb nanowires were successfully obtained after applying vacuum injection molding process with 50 kgf cm−2 hydraulic pressure, and PbS nano arrays can be formed by sulfurization at 500 °C for 5 h. Furthermore, an optical property, ultraviolet–visible (UV–Vis) absorption, was also measured. The measurement of the PbS nanowires showed that a significant quantum confinement effect made the energy gap produce a blue shift from 0.41 eV to 1.65 eV or 1.72 eV.

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“…Photoconductors provide high responsivity and high photoconductivity, while photodiodes (like Schottky junction PDs) offer fast response and low dark current [7][8][9][10][11]. It is noticable that photodiodes are able to generate the photovoltaic (PV) effect under light illumination, which provides superior detection in light irradiation without any exterior energy support [12][13][14][15]. It is called a self-powered PD system as applied in this research.…”

Section: Introductionmentioning

confidence: 99%

High performance visible–near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Wang

Zhang

et al. 2016

Nanotechnology

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Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ∼0.8 μs/3.2 μs. They also show excellent rectification ratios up to 10 with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 10 Jones and low noise currents <1 pAHz. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.

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Nanocoral PbS Films Schottky Solar Cell

Cited by 4 publications

References 8 publications

Pulsed laser deposition to investigate structural and optical properties of lead sulfide nanostructure

Pulsed laser deposition to investigate structural and optical properties of lead sulfide nanostructure

Fabrication and characterization of well-ordered PbS nanowires in aluminum oxide template by sulfurization and vacuum injection molding processes

High performance visible–near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

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