Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

Mazumdar, Kaushik; Kala, Sanam; Ghosal, Aniruddha

doi:10.1016/j.spmi.2018.04.038

Cited by 13 publications

(10 citation statements)

References 7 publications

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“…In the same year, Whiting et al [33] reported the formation of nanocracks underneath the ohmic metal contacts of GaN HEMTs. Wet etches are done to remove the ohmic contacts of electrically stressed devices, and it is found that the observed nanocracks orient along the [11][12][13][14][15][16][17][18][19][20] directions.…”

Section: High Electric Stressmentioning

confidence: 98%

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Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

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Section: High Electric Stressmentioning

confidence: 98%

“…Before stress (e) Aluminium oxidation at a pit [31] . A nanocrack extending from a TiN metal inclusion into the channel area [33] . The substrate is completely damaged at last [19] .…”

Section: High Electric Stressmentioning

confidence: 99%

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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show abstract

“…The bariumtitanate pickups were born in the 1940s, while the lead zirconate titanates were successfully developed in the 1950s. Since then, the piezoelectric ceramics have entered a new stage of development [4]. The piezoelectric ceramics experience continuous improvements, the binary, ternary and quaternary piezoelectric ceramics came into being [5].…”

Section: Introductionmentioning

confidence: 99%

One underlying mechanism for two piezoelectric effects in the octonion spaces

Weng

2022

Eur. Phys. J. Plus

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The paper aims to apply the algebra of octonions to explore the contributions of external derivative of electric moments and so forth on the induced electric currents, revealing a few major influencing factors relevant to the direct and inverse piezoelectric effects. J. C. Maxwell was the first to adopt the algebra of quaternions to describe the physical quantities of electromagnetic fields. The contemporary scholars utilize the quaternions and octonions to research the physical properties of electromagnetic and gravitational fields. The application of octonions is able to study the physical quantities of electromagnetic and gravitational fields, including the octonion field strength, field source, linear moment, angular moment, torque and force. When the octonion force is equal to zero, it is capable of achieving eight independent equations, including the force equilibrium equation, fluid continuity equation, current continuity equation, and second-precession equilibrium equation and others. One of inferences derived from the second-precession equilibrium equation is that the electric current and derivative of electric moments are able to excite each other. The external derivative of electric moments can induce the electric currents. Meanwhile the external electric currents are capable of inducing the derivative of electric moments. The research states that this inference can be considered as the underlying mechanism for the direct and inverse piezoelectric effects. Further the second-precession equilibrium equation is able to predict several new influencing factors of direct and inverse piezoelectric effects.

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“…The HEMT technology based on aluminium gallium nitride (AlGaN)/gallium nitride (GaN) hetero interface are appealing for power-switching, high temperature and millimeter-wave applications because this device has an excellent electronic properties, such as high breakdown field, high mobility and high sheetcarrier density of the two-dimensional electron gas (2-DEG [5], [6] comparing with conventional HEMTs devices [7], [8]. Despite the interesting characteristics of the HEMTs transistors, there are many parasitic effects which severely limits the direct-current characteristics and the radio-frequency performance of AlGaN/GaN-based HEMTs, such effects include current collapse, gate and drain lag, self-heating effects, the trapping effects.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor

Djelti

2022

IJECE

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<p><span>In this work, we examine the direct-current (DC) behavior and the radio-frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using Technologie Computer Aided Design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current, breakdown voltage, the transconductance. On the other hand, decreases the gate leakage current compared to a conventional HEMT and to a double-channel HEMT back-barriers. Furthermore, the proposed double-gate double-channel back-barrier HEMT device shows good cutoff frequency (94 GHz) and a maximum oscillation frequency (170 GHz). These results suggest that double-gate double channel HEMT back-barriers could be useful for high-frequency and high-power microwave applications.</span></p>

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Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

Cited by 13 publications

References 7 publications

Recent progress of physical failure analysis of GaN HEMTs

Recent progress of physical failure analysis of GaN HEMTs

One underlying mechanism for two piezoelectric effects in the octonion spaces

Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor

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