Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb nor Flash Device

Gerardi, C.; Ancarani, V.; Portoghese, R.; Giuffrida, S.; Bileci, M.; Bimbo, G.; Brafa, O.; Mello, Domenico; Ammendola, G.; Tripiciano, E.; Puglisi, Rosaria A.; Lombardo, S.

doi:10.1109/ted.2007.895868

Cited by 18 publications

(12 citation statements)

References 20 publications

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“…In 2007, STMicroelectronics reported on the fabrication of 16 Mb NOR-type NFGM devices. [39,40] The charge-trapping element consisted of silicon nanocrystals deposited by means of CVD. They investigated how the nanocrystal size and distribution affected the V th distribution and device reliability.…”

Section: Silicon-based Nfgm Devicesmentioning

confidence: 99%

Review paper: Nano-floating gate memory devices

Lee

2011

Electron. Mater. Lett.

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In recent decades, memory device technology has advanced through active research and the development of innovative technologies. Single transistor-based flash memory device is one of the most widely used forms of memory devices because their device structure is simple and the scaling is feasible. A nano-floating gate memory (NFGM) device is a kind of flash memory devices that uses nanocrystals as a charge-trapping element. The use of nanocrystals has advantages over memory devices that rely on other methods such as discontinuous trap sites and controllable trap levels. Nowadays considerable progress has been made in the field of NFGM devices, and novel application areas have been explored extensively. This review article focuses on new technologies that are advancing these developments. The discussion highlights recent efforts and research activities regarding the fabrication and characterization of nonvolatile memory devices that use a nanocrystal layer as a charge-trapping element. The review concludes with an analysis of device fabrication strategies and device architectures of NFGM devices for possible application to devices that are organic, printed, and flexible.

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Section: Silicon-based Nfgm Devicesmentioning

confidence: 99%

Review paper: Nano-floating gate memory devices

Lee

2011

Electron. Mater. Lett.

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“…However, the NCM technologies developed to date still face the concern of producing high-density of uniformly distributed size-homogeneous NCs and hence, cannot avoid fluctuations in device performance and fail to exploit size-dependence effects [2,[5][6][7][8]. While more research is needed to overcome these limitations and other concerns related to the dielectric materials and device architecture [5][6][7], the NCM approach still competes with other charge storage (e.g. SONOS) and non-charge storage (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Among the different technological routes explored the last few years for generating NCs in the gate oxide of MOS devices, two major techniques have been utilized, namely deposition in vacuum like low-pressure chemical vapor deposition (LPCVD, see e.g. [5,6] and references therein), and ion beam synthesis (IBS) [23,24]. The latter technique has received substantial attention due to its flexibility, manufacturing advantages and full compatibility with standard CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Si and Ge nanocrystals for future memory devices

Bonafos

Carrada

Benassayag

et al. 2012

Materials Science in Semiconductor Processing

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“…Silicon nanocrystal (Si-NC) memories are one of the most promising solutions to push the scaling limits of Flash memories at least to the 32-20 nm technology nodes [1][2][3][4][5][6]. Due to their discrete nature, Si-NCs are robust to defects in the oxide.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, it should be stated that to date, the promising performances of Si-NC memories have been mainly demonstrated on single cells or medium-sized arrays (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) [1][2][3][4][5][6]. An extensive set of experiments, including performance and reliability data of large-scale integrated memories should still be provided.…”

Section: Introductionmentioning

confidence: 99%