Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells

Efficient organometal trihalide perovskite planar-heterojunction solar cells on flexible polymer substrates

“…Henceforth, this configuration will be referred to as 'regular' and the cell architecture, which represents the focus of the work here shall be termed 'inverted'. Typical materials used in organic photovoltaics as hole selective contacts are PEDOT:PSS, V 2 O 5 and NiO 17,18 , while usually PCBM and more recently poly[(9,9-bis(3 0 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) 19 are used as electron acceptors or electron selective contacts. In order to determine whether these materials are compatible to act as electron and hole acceptors within the perovskite-based devices, we first estimate photoluminescence (PL) quenching of the perovskite emission in thin-film bi-layers, as has become routine in all organic solar cells 20 .…”

Functional Metal Oxides in Perovskite Solar Cells

“…[19,20] NiO is a p-type semiconductor material with high chemical stability and hole mobility due to the smooth filling of O 2À in the crystal lattice to form Ni 2 + vacancies. However, few types of inorganic metal oxide HTL can be used in PSCs.…”

“…V 2 O 5 and NiO are the generally used HTL in PSCs. [19] However, when it was first applied to devices, the p-type property of NiO and V 2 O 5 got a subpar photovoltaic performance. [21] In 2013, Snaith et al firstly demonstrated that the NiO film prepared by solution method has a good quenching effect on the fluorescence of perovskite, which proves that NiO can be used as an effective HTL for PSCs.…”

A wide temperature tolerance, solution-processed MoOx interface layer for efficient and stable organic solar cells

“…Potential alternatives for aforementioned purpose are transition metal oxides, such as V 2 O 5 [23][24][25], WO 3 [26][27][28], NiO [12,29], and MoO 3 [30][31][32][33][34][35][36][37], which have necessary semiconductor property and well physiochemical stability. Among this transition metal oxides, MoO 3 is one of the promising candidates due to its nontoxicity, deep electronic state and relative lower vaporization temperature (o800°C) which can easily deposited in vacuum [37].…”