Nanocrystal-ZnO Thin Film Deposition by a Novel Reactive Gas-Timing RF Magnetron Sputtering Provided for UV Photodetectors

Abstract

The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO2/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O2 were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO2/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact.

Efficient energy transfer from zinc oxide nanocrystals to europium (3+) and terbium (3+) ions embedded in an oxide matrix

“…Thin films of ZnO-nc in SiO 2 or Eu 3+ /Tb 3+ and ZnO-nc in SiO 2 can be prepared using most of the thin film deposition techniques mentioned above. For instance, sputtering [120][121][122][123], ion implantation [124], plasma enhanced chemical vapour deposition (PECVD) [125] and sol-gel process [9,25,28,[126][127][128][129] have been used by various groups to deposit thin film samples of semiconductor nanocrystals and rare-earth ions. Most of these thin film deposition techniques are complex processes which require sophisticated fabrications systems.…”