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The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO2/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O2 were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO2/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact.

The preparation and characterization of nickel oxide (NiO) thin film for electrochromic smart window applications are studied. The NiO thin film was prepared by the DC magnetron sputtering from a pure nickel target. The sputtering power was varies in the interval 50–200 W. The crystallinity and physical morphology of NiO films are characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM), respectively. The XRD result revealed that polycrystalline NiO thin films with preferred growth directions along (111) and (200) planes are obtained. Moreover, the electrochromic property of NiO thin films was investigated with a UV-Visible spectrophotometer. The colored state of the electrochromic cell was obtained by the ion insertion at the 1-V external applied bias in 0.1 M KOH. The reversibility between the colored and bleached states is confirmed by the optical transmittance. The result shows the optical contrast as high as 28.68.