Nanocrystalline Silicon and Silicon Carbide Optical Properties

Abstract

Porous silicon posseses a wide range of the unique properties and has good perspectives for photo-sensitive structures for a solar cells new generation. Due to the developed pore system, the area of absorbing surface increases, and also the increased sensitivity expands into the short-wavelength region due to the increased energy band gap of silicon nano-particles and silicon nano-filaments on the walls of the pores. Carbonization of the surface layer of porous silicon makes absorption even more effective. In this case, the spectrum of the solar cell expands into the shortwavelength region due to absorption of the high-energy photons in the wide gap material (SiC). In this study, layers of nanocrystalline porous silicon and porous silicon carbide are used as wide-gap material layers in photosensitive structures. The spectral characteristics of the specular reflectance of these materials are investigated.

Contact and contactless porous silicon parameter measurement techniques

“…1a). For this etching mode the pyramids [19]. Longer etching for 15 min causes regions with equal electrical resistivity to split again into smaller ones, with the average electrical resistivity still decreasing, but large pyramids start dissolving instead of pore depth growth and hence the roughness is smoothed.…”