Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Tachiki, Minoru; Fukuda, Teruyo; Seo, Hokuto; Sugata, Kenta; Banno, Tokishige; Umezawa, Hamao; Kawarada, Hiroshi

doi:10.1557/proc-675-w12.5.1

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…These states form extended 2D electronic levels. These results and recently published data by Tachiki et al 18 indicate that the narrow width of the accumulation layer at the surface gives rise to 2D properties, however further experiments are required to confirm these results.…”

supporting

confidence: 82%

Hydrogen-induced transport properties of holes in diamond surface layers

Nebel

Sauerer

Ertl

et al. 2001

Applied Physics Letters

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Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34–350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc (20 K⩽Tc⩽70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.

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supporting

confidence: 82%

Hydrogen-induced transport properties of holes in diamond surface layers

Nebel

Sauerer

Ertl

et al. 2001

Applied Physics Letters

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“…These states form an extended electronic level at the surface of hydrogenated diamond. There are indications that the narrow width of the hole accumulation layer gives rise to two-dimensional transport properties [17], however, further experiments are required to prove this assumption. …”

Section: Discussionmentioning

confidence: 99%

Low Temperature Surface Conductivity of Hydrogenated Diamond

Sauerer

Ertl

Nebel

et al. 2001

phys. stat. sol. (a)

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Conductivity and Hall experiments are performed on hydrogenated poly-CVD, atomically flat homoepitaxially grown Ib and natural type IIa diamond layers in the regime 0.34 to 400 K. For all experiments hole transport is detected with sheet resistivities at room temperature in the range 10 4 to 10 5 W/ & . We introduce a transport model where a disorder induced tail of localized states traps holes at very low temperatures (T < 70 K). The characteristic energy of the tail is in the range of 6 meV. Towards higher temperatures (T > 70 K) the hole density is approximately constant and the hole mobility m is increasing two orders of magnitude. In the regime 70 K < T < 200 K, m is exponentially activated with 22 meV, above it follows a $T 3/2 law. The activation energy of the hole density at T < 70 K is governed by the energy gap between holes trapped in the tail and the mobility edge which they can propagate. In the temperature regime T < 25 K an increasing hole mobility is detected which is attributed to transport in delocalized states at the surface.

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“…Film thickness was somewhat thinner near the wafer perimeter 15. NCD film had a thickness of ∼50–200 nm 16; µCD samples were several hundred nanometers to a few micrometers thick 17. Wafers were cut into about 17 pieces of about 1 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

Chinese hamster ovary cell viability on hydrogen and oxygen terminated nano‐ and microcrystalline diamond surfaces

Smisdom

Smets²,

Williams

et al. 2009

Physica Status Solidi (a)

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Transfected Chinese hamster ovary cells were cultured on bare uncoated chemical vapor deposited thin nanoand microcrystalline diamond surfaces, hydrophobic hydrogen-and hydrophilic oxygen-terminated. Optical and biochemical analyses show that compared to glass controls, growth and viability were not significantly affected (one-way ANOVA). Based on two-way ANOVA analyses, neither grain size nor surface termination had a significant influence until five days post seeding.

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Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Cited by 4 publications

References 17 publications

Hydrogen-induced transport properties of holes in diamond surface layers

Hydrogen-induced transport properties of holes in diamond surface layers

Low Temperature Surface Conductivity of Hydrogenated Diamond

Chinese hamster ovary cell viability on hydrogen and oxygen terminated nano‐ and microcrystalline diamond surfaces

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