Nanodiamod lateral device field emission diode fabricated by electron beam lithography

LeQuan, X.C.; Choi, B.K.; Kang, W.P.; Davidson, J.L.

doi:10.1016/j.diamond.2009.10.014

Cited by 6 publications

(2 citation statements)

References 6 publications

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“…For example, hydrogenation of diamond leads to a negative electron affinity surface, ,,, and low threshold field emission can be readily observed. − However, low carrier concentration in the conduction band due to its large energy gap limits the overall emission current from diamond cathodes, precluding their implementation into applications such as X-ray tubes, , microwave amplifiers, and rocket thrusters, − where high current density metallic cathodes that emit multiple closely packed electron beams at low threshold fields are required. Recent progress on deposition of nanodiamond films alleviates some of the low saturation current issues, but emission in such films can be attributed to graphitic grain boundaries rather than sp 3 diamond phase. In addition to low threshold fields and high current densities, emission of coherent electron beams is also technologically desirable.…”

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confidence: 99%

Field Emission from Atomically Thin Edges of Reduced Graphene Oxide

et al. 2011

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Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/m) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams may be coherent.Based on our high-resolution transmission electron microscopy, infrared spectroscopy and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.

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confidence: 99%

Field Emission from Atomically Thin Edges of Reduced Graphene Oxide

et al. 2011

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“…These properties make diamond an ideal material for a wide variety of emerging nano-and microscale applications [5][6][7]. High-resolution patterning of the diamond surface is conventionally performed by resist-based lithography techniques [8,9] or by direct subtractive milling by focused ion beam (FIB) [10]. In recent years, researchers have developed various nanofabrication techniques for diamond patterning [11,12].…”

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confidence: 99%

Resolution, masking capability and throughput for direct-write, ion implant mask patterning of diamond surfaces using ion beam lithography

Tripathi¹,

Scanlan²,

O'Hara³

et al. 2012

J. Micromech. Microeng.

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Direct-write, ion implant top surface imaging is a two-step nanopatterning method that simplifies and improves processing of diamond for various applications. The technique utilizes a low-dose (non-milling) gallium ion implant into the first few nanometers of the surface using a focused ion beam. The implanted regions form a hard mask to plasma etching allowing production of well-controlled high relief structures over the exposed surface. We demonstrate the ability of the process to fabricate high aspect ratio, high-resolution patterns over millimetre-size areas in all varieties of diamond including natural, synthetic HPHT and CVD films, at various levels of doping, for industrial scale applications. This paper sets significant new limits of resolution and masking capability for the technique, and compares throughput in comparison to other high resolution lithographic techniques.

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