Nanodiamond planar lateral field emission diode

Subramanian, K.A.; Kang, W.P.; Davidson, J.L.; Hofmeister, William; Choi, B.K.; Howell, M.

doi:10.1016/j.diamond.2005.08.068

Cited by 40 publications

(21 citation statements)

References 16 publications

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“…[4] Furthermore, the conical structures could serve as good templates for producing nanodiamond tip arrays, which could be made into diamond nanoelectrode ensembles easily by the simple polymer-masking technique described in our earlier work. [4] Also, the nanodiamond tip arrays could find interest in functionalized biosensor [5] and field emission [6] applications.…”

Section: Introductionmentioning

confidence: 99%

Nanodiamond Tipped and Coated Conical Carbon Tubular Structures

Chernomordik

Dumpala

Chen

et al. 2008

Chemical Vapor Deposition

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Studies of diamond nucleation and growth on conical carbon tubular structures show that the nucleation preferentially occurs at the tips, but only occurs on the sidewalls when they are pretreated with diamond or other powder dispersions, forming a nanodiamond coating. The high-resolution transmission electron microscopy (HRTEM) studies reveal that the diamond nucleation on the sidewalls may proceed through the formation of diamond nuclei within the walls at subsurface damage sites caused during pretreatment. In the case of experiments with low atomic hydrogen conditions, carbon onion structures are observed on the sidewalls but only with pretreatments.

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Section: Introductionmentioning

confidence: 99%

Nanodiamond Tipped and Coated Conical Carbon Tubular Structures

Chernomordik

Dumpala

Chen

et al. 2008

Chemical Vapor Deposition

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“…We have developed a fabrication technique, paralleling standard IC process technology, for monolithic nanodiamond lateral devices, employing a reactive ion etchassisted micropatterning technique for the material. Having demonstrated the performance of the lateral diode previously, [12][13][14] this work describes the design, fabrication process, and field emission characteristics of the nanodiamond lateral vacuum device, operating in triode mode.…”

mentioning

confidence: 99%

Nanocrystalline diamond lateral vacuum microtriode

Subramanian

Kang

Davidson

2008

Applied Physics Letters

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A vacuum field emission microtriode in lateral configuration utilizing nanocrystalline diamond is presented. The nanodiamond lateral triode is a completely integrated device comprising a fingerlike emitter geometry with an ∼15nm tip radius of curvature, built-in gate, and anode with gate-cathode spacing of 3μm and anode-cathode spacing of 12μm. Triode characteristics, demonstrating gate-controlled emission current modulation with an anode current of 4μA and high transconductance of 0.3μS from a single emitter-finger at low device voltages (Vg<40V and Va∼65V), are obtained. The anode-induced electron emission conforms to Fowler–Nordheim tunneling. These observations from the first diamond lateral vacuum microtriode demonstrate a robust device for integrated circuit-compatible, temperature-, and radiation-insensitive vacuum micro-nanoelectronics.

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“…The lateral device processing approach has been reported in detail in previous publications (Subramanian et al 2005b(Subramanian et al , 2006c. A nitrogen-incorporated nanodiamond film grown by CH 4 /H 2 /N 2 microwave plasma-enhanced CVD on a silicon-on-insulator (SOI) wafer is micropatterned using a pure oxygen plasma chemistry reactive ion etch (RIE) in an inductively coupled plasma-RIE system.…”

Section: (B ) Experimentalmentioning

confidence: 99%

“…The lateral device, in a diode configuration, has uniform arrays of nanodiamond fingered emitters with a high aspect-ratio geometry forming the cathode, in close proximity with the anode structure, with equal interelectrode spacing distribution over a large area. The nanodiamond lateral finger array FE diodes have a low voltage and a potential for a high emission current operation (Subramanian et al 2005b).…”

Section: The Nanodiamond Lateral Field Emission Device (A ) Introductionmentioning

confidence: 99%

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

Davidson

Kang

Subramanian

et al. 2007

Phil. Trans. R. Soc. A.

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Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged 'finger-like' nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turnon voltage of 7 V and a high emission current of 90 mA at an anode voltage of 70 V (electric field of approx. 7 V mm K1 ) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.

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Nanodiamond planar lateral field emission diode

Cited by 40 publications

References 16 publications

Nanodiamond Tipped and Coated Conical Carbon Tubular Structures

Nanodiamond Tipped and Coated Conical Carbon Tubular Structures

Nanocrystalline diamond lateral vacuum microtriode

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

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