Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

Guerrera, Stephen A.; Akinwande, A.I.

doi:10.1088/0957-4484/27/29/295302

Cited by 110 publications

(65 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It can be seen from the I collect − V driven curve that, I collect becomes measurable when the V driven is larger than ≈3.1 V. It then increases exponentially with V driven and approaches ≈20 µA at V driven = 3.9 V. Taking the horizontally projected area of emitting SACNT films (S = 1500 µm 2 ) into consideration, an emission current density up to ≈1.33 A cm −2 is obtained, which is comparable to that of commercial thermionic electron emitters. [19,20] The driven voltage as a function of emission current density from the device measured in Figure 2b together with those of previously reported gated FEAs [21][22][23][24][25][26] are plotted on the same graph in Figure 2c. Here, driven voltage of FEAs refers to the voltage applied to the gate electrode.…”

Section: Thermionic Electron Emission Characteristics Of Single Micromentioning

confidence: 90%

High‐Performance On‐Chip Thermionic Electron Micro‐Emitter Arrays Based on Super‐Aligned Carbon Nanotube Films

Wang

Yang

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

An important advancement towards the realization of miniaturized and fully integrated vacuum electronic devices will be the development of on‐chip integrated electron sources with stable and reproducible performances. Here, the fabrication of high‐performance on‐chip thermionic electron micro‐emitter arrays is demonstrated by exploiting suspended super‐aligned carbon nanotube films as thermionic filaments. For single micro‐emitter, an electron emission current up to ≈20 µA and density as high as ≈1.33 A cm−2 are obtained at a low‐driven voltage of 3.9 V. The turn‐on/off time of a single micro‐emitter is measured to be less than 1 µs. Particularly, stable (±1.2% emission current fluctuation for 30 min) and reproducible (±0.2% driven voltage variation over 27 cycles) electron emission have been experimentally observed under a low vacuum of ≈5 × 10−4 Pa. Even under a rough vacuum of ≈10−1 Pa, an impressive reproducibility (±2% driven voltage variation over 20 cycles) is obtained. Moreover, emission performances of micro‐emitter arrays are found to exhibit good uniformity. The outstanding stability, reproducibility, and uniformity of the thermionic electron micro‐emitter arrays imply their promising applications as on‐chip integrated electron sources.

show abstract

Section: Thermionic Electron Emission Characteristics Of Single Micromentioning

confidence: 90%

High‐Performance On‐Chip Thermionic Electron Micro‐Emitter Arrays Based on Super‐Aligned Carbon Nanotube Films

Wang

Yang

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…In that context, extensive research is ongoing for field emission arrays (FEAs) and gated‐field emission arrays to modulate the emission current. Few latest significant studies are silicon‐based FEA, diamond‐based FEA, ZnO‐based FEA, and CNT‐based FEA …”

Section: Utilization (Applications)mentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

View full text Add to dashboard Cite

Artificial intelligence platforms, high-speed computation, and data handling systems increasingly need energy-efficient systems. Electron emission was fundamental to the development of transistors and electronics over seven decades ago. This technology has a renewed emergence and includes implications in diverse fields ranging from electronics, telecommunication, defense, space exploration, medical science, and material science to televisions and displays. For such a vital field, a critical review of theories, current research directions, applications, and future prospects is invaluable. Herein, the ongoing research directions adopted to enhance the emitter performance are reviewed and the relative degree of their success is compared. This is supported by an overview of key electron emission, transport mechanisms, and ways to tune a particular mechanism for energy-efficient applications. The diverse range of applications in this field, with a particular focus on electronics, is outlined. Exciting current developments in electron field emission that could revolutionize the electronic industry with a resurgence of nanoscale field emission transistor in the air medium are also discussed. Figure 2. Representation of different electron emission mechanisms: a) Comparison of thermionic emission, Schottky emission, FN tunnelling, and direct tunnelling with schematic energy band diagram. b) Typical thermionic emission plot. c) Typical Schottky plot. (b,c)Reproduced with permission. [3]

show abstract

“…This demonstration triode was not optimized for low turn‐on potential or high transconductance. Transconductance values as high as 30 µS are obtainable from optimized silicon field emitter arrays with integrated gates, of 30 µS from a 500 × 500 tip array, in part by reducing the gate‐cathode tip distance to less than 1 micron . Future work on inverse opal field emitters could take advantage of the uniformity and mechanical stability of the emitter array to fabricate integrated gate and anode layers with much smaller distances.…”

Section: Triode Performance Results and Discussionmentioning

confidence: 99%

Field Emitters Using Inverse Opal Structures

Jones

Zhang

Murty

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Electronics to be used in space must often perform in high temperature or radiation hard environments that render conventional solid-state technologies unable to meet mission requirements. As a result, microscale and nanoscale field emission devices are being explored as fundamental components of electronics capable of operating in these harsh environments. Wide scale implementation of these devices is hindered by the difficulty of fabricating large, mechanically stable, uniform arrays of sharp emitting tips. This work presents a scalable method to produce uniform arrays of field emitting tips. Polystyrene spheres are applied as a template for electrochemical deposition. An electrochemical etching process is developed to sharpen tips to a radius of curvature of 5-10 nm, optimizing them for field emission applications. The flexibility of the fabrication process allows for device optimization in terms of tip geometry, density, and constituent material to achieve high field enhancement factors, exceeding 100. Miniaturized field emitting diode and gated triode devices are fabricated. Finally, the electrochemically deposited material is used as a scaffold for the deposition of a refractory, low work function emitting layer, and the hybrid cathode is characterized as a field emitter at temperatures up to 300 ºC.

show abstract

Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

Cited by 110 publications

References 38 publications

High‐Performance On‐Chip Thermionic Electron Micro‐Emitter Arrays Based on Super‐Aligned Carbon Nanotube Films

High‐Performance On‐Chip Thermionic Electron Micro‐Emitter Arrays Based on Super‐Aligned Carbon Nanotube Films

Electron Emission Devices for Energy‐Efficient Systems

Field Emitters Using Inverse Opal Structures

Contact Info

Product

Resources

About