“…Metal-oxide-semiconductor (MOS) based sensors can be used in a portable gas sensing system owing to several of their advantages, including high-sensitivity, fast response-time, compact size, and low cost. Specifically, it is easy to fabricate nanostructures to achieve high-sensitivity [26][27][28][29][30][31]. Many metal oxides, including SnO 2 , ZnO, WO 3 , TiO 2 , In 2 O 3 , Nb 2 O 5 , FeO, NiO, Fe 2 O 3 , Ga 2 O 3 , MoO 3 , Sb 2 O 5 , and V 2 O 5 , which exhibit a large variation in electrical resistance after exposure to hydrogen gas, have been investigated for use as hydrogen sensing materials in MOS [27,28].…”