2018
DOI: 10.1016/j.snb.2017.08.198
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Nanogap-controlled Pd coating for hydrogen sensitive switches and hydrogen sensors

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Cited by 46 publications
(27 citation statements)
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“…Figure 4F shows the comparative limits of detection (LOD) of our system with other Pd-based H2 sensors operated at r.t. in air, as reported in recent literature (see the summary in Table S3). 4,[8][9][10][43][44][45][46][47][48][49][50][51] As shown, although the response times are not fast, the ITPES-PdPt NPs sensors show a superior H2 LOD as compared to previous Pdbased H2 sensors.…”
Section: Sensing Characteristics Of Itpes-pdpt Npsmentioning
confidence: 85%
“…Figure 4F shows the comparative limits of detection (LOD) of our system with other Pd-based H2 sensors operated at r.t. in air, as reported in recent literature (see the summary in Table S3). 4,[8][9][10][43][44][45][46][47][48][49][50][51] As shown, although the response times are not fast, the ITPES-PdPt NPs sensors show a superior H2 LOD as compared to previous Pdbased H2 sensors.…”
Section: Sensing Characteristics Of Itpes-pdpt Npsmentioning
confidence: 85%
“…Figure 4b shows how a partially suspended Pd structure relieves the stress compared with a fully anchored Pd structure in a mechanical simulation. There was also an attempt to create a high‐sensitivity sensor by utilizing volume expansion through the application of specific nanomaterial structures 83,84,195–199. When nanogaps are manufactured in an aligned and controlled form with consideration of volume expansion depending on the concentration of H 2 , a switch‐type H 2 sensor could be produced (Figure 4c,d).…”
Section: High‐performance Sensors Using Geometrically Structured Nanomentioning
confidence: 99%
“…Metal-oxide-semiconductor (MOS) based sensors can be used in a portable gas sensing system owing to several of their advantages, including high-sensitivity, fast response-time, compact size, and low cost. Specifically, it is easy to fabricate nanostructures to achieve high-sensitivity [26][27][28][29][30][31]. Many metal oxides, including SnO 2 , ZnO, WO 3 , TiO 2 , In 2 O 3 , Nb 2 O 5 , FeO, NiO, Fe 2 O 3 , Ga 2 O 3 , MoO 3 , Sb 2 O 5 , and V 2 O 5 , which exhibit a large variation in electrical resistance after exposure to hydrogen gas, have been investigated for use as hydrogen sensing materials in MOS [27,28].…”
Section: Introductionmentioning
confidence: 99%