Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Zhang, Jian; Deng, Youwen; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiaowei; Wu, Pei; Dong, Fengzhong; Chen, Peipei; Chu, Weiguo; Zhou, Haiqing; Sun, Lianfeng

doi:10.1002/advs.201700588

Cited by 12 publications

(7 citation statements)

References 38 publications

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“…Electromigrated metallic junctions may suffer from instabilities at room temperature, owing to the migration of the metal atoms along the electrode surfaces at temperatures above ≈200 K. [107] Therefore, the electromigration process is usually performed in vacuum at cryogenic temperatures. [108] By contrast, carbon materials such as graphene, [109,110] and singlewalled carbon nanotubes (SWNTs), [111,112] are good alternative electrode materials that can be separated into nanogaps by using a process similar to electromigration, which is often termed electroburning. For example, Prins et al performed feedback-controlled electroburning to create nanogap electrodes based on few-layer graphene at room temperature, [109] as shown in Figure 4C.…”

Section: Electromigration Break Junctionmentioning

confidence: 99%

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Bandari

Schmidt

2023

Advanced Materials

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Section: Electromigration Break Junctionmentioning

confidence: 99%

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Bandari

Schmidt

2023

Advanced Materials

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“…To overcome such limitations related to the operating energy of the NEM-NVM, a sub-10 nm air gap formation method with an electroburning process of single-walled carbon nanotubes (SWNTs) was proposed recently 32 . The fabricated SWNT memory device has an ultra-low energy consumption of less than 1 .…”

Section: Introductionmentioning

confidence: 99%

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

et al. 2023

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With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 $${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$ fJ bit − 1 , we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 $${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$ fJ bit − 1 . Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.

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“…Due to their unique 1D structure and excellent electrical properties, single‐walled carbon nanotubes (SWNTs) have been considered to be good candidates for nanoscale devices, for example, field effect transistors, nanoelectromechanical systems, and sensors . In particular, SWNTs are suitable for the fabrication of SETs because of their small diameters . Fabrication of SETs using SWNTs relies on the creation of tunnel barriers.…”

Section: Introductionmentioning

confidence: 99%

Room‐Temperature Carbon Nanotube Single‐Electron Transistors with Mechanical Buckling–Defined Quantum Dots

Zhang

Liu

Kong³

et al. 2018

Adv Elect Materials

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Single‐electron transistors (SETs) have been proposed as a future alternative to conventional Si‐based electronics. However, their practical applications are strongly limited because most SETs operate at cryogenic temperatures. In this work, room temperature operating SETs are successfully fabricated with the realization of a mechanical buckling–defined quantum dot within a suspended and strained single‐walled carbon nanotube. Clear Coulomb oscillations are observed at room temperature due to the Coulomb blockade effect. The Coulomb charging energy is calculated to be 160 meV, which substantially exceeds the thermal energy. At 10 K, the Coulomb staircases are observed in the current–voltage characteristics with an energy level separation ≈29 meV, confirming that the island behaves as a well‐defined quantum dot for the electrons. This device fabrication method may also help future investigations into the electromechanical properties of nanotube quantum systems.

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Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Cited by 12 publications

References 38 publications

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

Room‐Temperature Carbon Nanotube Single‐Electron Transistors with Mechanical Buckling–Defined Quantum Dots

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