2010
DOI: 10.1016/j.tsf.2009.10.011
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Nanograins dependent dielectric constant, tunability, phase transition, impedance spectroscopy and leakage current of (Pb1−xSrx)TiO3 thin films

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Cited by 15 publications
(7 citation statements)
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“…It is also clear from Fig. 5 that the dielectric constant increases with increasing Co concentration because of increasing particle size [25]. The high dielectric constant measured at low frequency region might be attributed to the Maxwell-Wagner type interfacial polarization mechanism.…”
Section: Resultsmentioning
confidence: 75%
See 1 more Smart Citation
“…It is also clear from Fig. 5 that the dielectric constant increases with increasing Co concentration because of increasing particle size [25]. The high dielectric constant measured at low frequency region might be attributed to the Maxwell-Wagner type interfacial polarization mechanism.…”
Section: Resultsmentioning
confidence: 75%
“…Furthermore, the peak position shifts to smaller angle with increasing of Co content, revealing of changes in lattice parameters. The values of lattice parameters for rutile phase of, a(Å)¼4.595, 4.596 and 4.603 and c(Å)¼2.969, 2.968 and 2.970 and the average particle's size of (using Debye-Scherer's relation) 25, 27 and 28 nm, respectively, are calculated from XRD data for TC1, TC2 and TC4 nanoparticles. The values of a, c and average particle's size are given in Table 1.…”
Section: Experimental Techniquementioning
confidence: 99%
“…At higher frequencies the losses are found to be low, since domain wall motion is inhibited and magnetization is forced to change rotation. After 15 MHz the abrupt variation in ε and tan ı may occur due to resonance effect [9]. Fig.…”
Section: Xrd Density and Microstructure Characterizationmentioning
confidence: 99%
“…In addition to the coexistence of ferroelectricity and ferromagnetism, the magnetoelectric (ME) coupling (i.e., magnetic degree of freedom can be manipulated by an electric field and vice versa) for spintronic devices [1][2][3][4][5][6], and the occurrence of good dielectric properties for various applications (i.e., tunable mixers, phase shifters, voltage controlled oscillators, delay lines and ultra large-scale integration dynamic random access memory (DRAM) capacitors) of MF are highly important [7,8]. The dielectric properties of nanostructured MF and ferroelectrics are suitable for those devices which operate at higher frequencies [7,9]. The dielectric properties are dependent on several factors, such as method of preparation, heat treatment, sintering conditions, chemical composition, cation distribution and crystallite size.…”
Section: Introductionmentioning
confidence: 99%
“…Where Js is the current density across the Schottky type barrier, A is a constant known as Richardson constant, kB is the Boltzmann constant, T is the absolute temperature, φb is the height of Schottky barrier (voltage across the barrier) and E is the electric field [83][84][85]. The above relations specify that log Js varies directly with E 1/2 .…”
Section: Je Characteristicsmentioning
confidence: 99%