We report aerosol deposition (AD) method for preparation of bismuth layer-structured ferroelectric thick films with enhanced ferroelectric and insulating properties. Constitution phase, crystal structure, polarization and leakage current properties of SrBi 2 Ta 2 O 9 (SBTa) thick films with thickness of 2-4 m were investigated. While obtained as-deposited SBTa films have slight c-axis grain orientation, the degree of orientation for the films annealed at higher than 1000 C was the same as that for sintered bulks. Fracture cross-sectional scanning electron microscopy (SEM) images revealed that the as-deposited SBTa films on glass substrates had a fully dense microstructure. The low leakage current density (J) of less than 10 À7 A/cm 2 at 1 MV/cm was observed for SBTa films annealed at less than 900 C, and the SBTa films annealed at 900 C indicated a remanent polarization (P r ) of 5.7 C/cm 2 , which is larger than that of sintered bulks (P r of 4.7 C/cm 2 ) fabricated by conventional solid-state reaction using the same starting raw powder used for the AD method. #