2012
DOI: 10.1143/jjap.51.09la17
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Polarization Properties of Bismuth Strontium Tantalate Ceramic Films Deposited by Aerosol Deposition Method

Abstract: We report aerosol deposition (AD) method for preparation of bismuth layer-structured ferroelectric thick films with enhanced ferroelectric and insulating properties. Constitution phase, crystal structure, polarization and leakage current properties of SrBi 2 Ta 2 O 9 (SBTa) thick films with thickness of 2-4 m were investigated. While obtained as-deposited SBTa films have slight c-axis grain orientation, the degree of orientation for the films annealed at higher than 1000 C was the same as that for sintered bul… Show more

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Cited by 3 publications
(1 citation statement)
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“…This result clearly demonstrates that the heat treatment at around 800°C or above induces to drastically promote grain growth, and the relationship between grain growth and heat treatment is distinctly-different from that of annealed SrBi 2 Ta 2 O 9 (SBTa) films deposited by the AD method. 33) For the SBTa thick films annealed at less than or equal to 1000°C, abnormal grain growth was not confirmed, and the D and grain size continuously increased with increasing annealing temperature. It is well-known that abnormal grain growth is induced by (I) liquid phase in the grain boundary, (II) interposition of second phase fine particles, (III) promoting activation of atomic element in grain boundary and (or) (IV) appropriate thermal gradient.…”
Section: Resultsmentioning
confidence: 87%
“…This result clearly demonstrates that the heat treatment at around 800°C or above induces to drastically promote grain growth, and the relationship between grain growth and heat treatment is distinctly-different from that of annealed SrBi 2 Ta 2 O 9 (SBTa) films deposited by the AD method. 33) For the SBTa thick films annealed at less than or equal to 1000°C, abnormal grain growth was not confirmed, and the D and grain size continuously increased with increasing annealing temperature. It is well-known that abnormal grain growth is induced by (I) liquid phase in the grain boundary, (II) interposition of second phase fine particles, (III) promoting activation of atomic element in grain boundary and (or) (IV) appropriate thermal gradient.…”
Section: Resultsmentioning
confidence: 87%