Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

Fritzsche, Monika; Muecklich, A.; Facsko, Stefan

doi:10.1063/1.4721662

Cited by 32 publications

(25 citation statements)

References 24 publications

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“…In this way hole-like patterns can be formed on Ge (Fig. 19.45b), which was also observed experimentally for Ga implantation of Ge [135,136]. For even higher ion energies void formation is happening deeper in the bulk.…”

Section: Formation Of Sponge-like Ge Morphologiessupporting

confidence: 74%

Nanostructures by Mass-Separated FIB

Bischoff

Böttger

Philipp

et al. 2013

Lecture Notes in Nanoscale Science and Technology

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The introduction of mass-separated systems in the field of focused ion beams significantly increases the area of application in nanotechnology due to the availability of a broad spectrum of ions with the same advantages compared to classical Ga instruments. A short description of the configuration of a mass-separated FIB tool is given as well as the fundamentals of alloy liquid metal ion sources. Examples of application include patterned tailoring of functional surfaces and ioninduced phase transformation in thin layers, in particular the Si nanowire fabrication by FIB implantation and subsequent wet-chemical, anisotropic etching and the FIB lithography of thin ta-C films. Furthermore, the ion beam synthesis (IBS) of CoSi 2 nanostructures by Co-FIB writing and annealing, and the modification of surface morphology by various mono-and polyatomic projectiles in a broad energy and temperature range in different materials are described and discussed.

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Section: Formation Of Sponge-like Ge Morphologiessupporting

confidence: 74%

Nanostructures by Mass-Separated FIB

Bischoff

Böttger

Philipp

et al. 2013

Lecture Notes in Nanoscale Science and Technology

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“…This is exemplarily depicted in Fig. 15 Therefore, later on in this work only "stationary" surface patterns, obtained by irradiation with a fluence of 1 Â 10 17 cm À2 , are shown and used for the analysis and comparison of patterns.…”

Section: A Fluence and Flux Dependencymentioning

confidence: 99%

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

Böttger

Bischoff

Heinig

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ge surfaces of up to 780 K temperature have been irradiated at normal incidence with up to 10 17 Bi þ ions cm À2 having kinetic energies from 10 to 30 keV. The resulting surface morphologies have been studied by scanning electron microscopy. While at room temperature the impacts of highenergy Bi þ ions result in porous networks, at elevated irradiation temperatures hexagonally ordered dot arrays are formed, whereas after a further temperature increase the surface becomes smooth. The comprehensive experimental studies have been summarized in a phase diagram of surface morphologies in the ion energy versus substrate temperature plane. In this phase diagram, the onset of dot formation with increasing substrate temperature has been consistently modeled by nanomelting of the collision cascade volume of ion impacts, thereby taking into account the thermodynamic parameters of amorphous Ge (melt temperature, heat of fusion, and heat capacity) as well as the energy density deposited in the cascade volume as predicted by established simulation programs.

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“…For ion energies in the range of 10 2 to 10 3 eV, this type of spontaneous surface nanopatterning has been observed on a wide variety of elemental and compound materials, including metals, semiconductors, and insulators. The pattern morphology depends on which surface processes are dominant under the given experimental conditions; various surface morphologies including parallel ripples with sinusoidal or sawtooth profile [10][11][12][13][14]; nanocone [15][16][17] or nanohole [18][19][20] patterns; and pyramidal structures with three-, four-, or sixfold symmetry [14,21,22] have been reported. With possible applications of this self-assembled surface pattern formation in bottom-up nanofabrication already being explored [23][24][25][26], there are still fundamental aspects to be clarified: For instance, the influence of the polar and azimuthal ion beam direction on the patterning morphology has been widely studied for amorphous or amorphized surfaces with isotropic diffusion, but a corresponding investigation is still lacking for crystalline surfaces with anisotropic diffusion in the reverse epitaxy regime [21]-and so is a theoretical description.…”

Section: Introductionmentioning

confidence: 99%

Nanopatterning of the (001) surface of crystalline Ge by ion irradiation at off-normal incidence: Experiment and simulation

et al. 2020

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Intricate topographical patterns can form on the surface of crystalline Ge(001) subject to low-energy ion irradiation in the reverse epitaxy regime, i.e., at elevated temperatures which enable dynamic recrystallization. We compare such nanoscale patterns produced by irradiation from varied polar and azimuthal ion incidence angles with corresponding calculated surface topographies. To this end, we propose a continuum equation including both anisotropic erosive and anisotropic diffusive effects. Molecular dynamics simulations provide the coefficients of angle-dependent sputter erosion for the calculations. By merely changing these coefficients accordingly, the experimentally observed surface morphologies can be reproduced, except for extreme ion incidence angles. Angle-dependent sputter erosion is thereby identified as a dominant mechanism in ion-induced pattern formation on crystalline surfaces under irradiation from off-normal incidence angles.

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Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

Cited by 32 publications

References 24 publications

Nanostructures by Mass-Separated FIB

Nanostructures by Mass-Separated FIB

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

Nanopatterning of the (001) surface of crystalline Ge by ion irradiation at off-normal incidence: Experiment and simulation

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