Nanolaminated HfO2/Al2O3 Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates

Liu, Chen; Wang, Zhuofan; Zhang, Yuming; Lü, Hong-Liang; Zhang, Yimen

doi:10.1002/admi.202201477

Cited by 8 publications

(5 citation statements)

References 56 publications

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“…It could open new opportunities to realize bio-inspired in-memory computing. Very promising electrical characteristics of bendable and biodegradable metal-oxide-semiconductor field-effect transistors and capacitors fabricated by integrating HfO 2 /Al 2 O 3 high-k bilayers on silicon nanomembranes (Si NMs) and utilizing polymeric substrates have been reported in [81]. This demonstrates the potential of these stacks to be utilized in on-demand water-soluble Si NM-based devices toward futuristic applications in disposable electronics and temporary biomedical implants.…”

Section: Discussionmentioning

confidence: 92%

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Spassov,

Paskaleva

2023

Nanomaterials

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The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, there are still innovations within the current CMOS technology, which could be implemented to improve the data storage ability of memory cells—e.g., replacement of the current dominant floating gate non-volatile memory (NVM) by a charge trapping memory. The latter offers better operation characteristics, e.g., improved retention and endurance, lower power consumption, higher program/erase (P/E) speed and allows vertical stacking. This work provides an overview of our systematic studies of charge-trapping memory cells with a HfO2/Al2O3-based charge-trapping layer prepared by atomic layer deposition (ALD). The possibility to tailor density, energy, and spatial distributions of charge storage traps by the introduction of Al in HfO2 is demonstrated. The impact of the charge trapping layer composition, annealing process, material and thickness of tunneling oxide on the memory windows, and retention and endurance characteristics of the structures are considered. Challenges to optimizing the composition and technology of charge-trapping memory cells toward meeting the requirements for high density of trapped charge and reliable storage with a negligible loss of charges in the CTF memory cell are discussed. We also outline the perspectives and opportunities for further research and innovations enabled by charge-trapping HfO2/Al2O3-based stacks.

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Section: Discussionmentioning

confidence: 92%

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Spassov,

Paskaleva

2023

Nanomaterials

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“…It is significant to compare the V fb and effective oxide charge (N eff ) in encapsulated and bare MOSCAPs. The V fb corresponding to C fb is extracted from C-V curves, and C fb and N eff are calculated as follows [15]:…”

Section: Comparative Analysis Of Extracted Parametersmentioning

confidence: 99%

Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors

Wang,

Lu,

Zhang

et al. 2024

Crystals

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Ultrathin encapsulation strategies show huge potential in wearable and implantable electronics. However, insightful efforts are still needed to improve the electrical and mechanical characteristics of encapsulated devices. This work introduces Al2O3/alucone nanolaminates using hybrid atomic/molecular layer deposition for ultrathin encapsulation structures employed in crystalline silicon nanomembrane (Si NM)-based metal-oxide-semiconductor capacitors (MOSCAPs). The comprehensive electrical and mechanical analysis focused on the encapsulated and bare MOSCAPs with three gate dielectric diameters (Ø) under planar and bending conditions, including concave bending radii of 110.5 mm and 85 mm as well as convex bending radii of 77.5 mm and 38.5 mm. Combined with the Ø-related mechanical analysis of the maximum strain in the critical layers and the practical investigations of electrical parameters, the encapsulated MOSCAPs with Ø 160 μm showed the most stable electro-mechanical performance partly due to the optimized position of the neutral mechanical plane. Comparison of the electrical changes in Al2O3/alucone-encapsulated MOSCAPs with Ø 160 μm, Ø 240 μm, and Ø 320 μm showed that it is beneficial to define the gate dielectric surface area of 0.02 to 0.05 mm2 for Si NM-based wearable electronics. These findings are significant for leveraging the practical applications in ultrathin encapsulation strategies for reliable operations of crystalline Si NM-based integrated circuits.

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“…Figure 8 a,b shows the ε-dependent changes in the effective oxide charge (N eff ) and oxide trapped charge (N ot ) divided by the corresponding values in the unbent state. N eff and N ot were calculated as follows [ 25 ].

where V fb_theor.…”

Section: Electrical Characteristics At Different Bending Radiimentioning

confidence: 99%

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Wang,

Lu,

Zhang

et al. 2023

Micromachines

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Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm Al2O3 and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that Al2O3/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin Al2O3/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors.

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Nanolaminated HfO₂/Al₂O₃ Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates

Cited by 8 publications

References 56 publications

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Ultrathin Encapsulation Strategies with Predefined Gate Dielectric Surface Area for Flexible Crystalline Silicon Nanomembrane-Based MOS Capacitors

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

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