Nanolayer Patterning Based on Surface Modification with Extreme Ultraviolet Light

Moon, Sangwoon; Jeon, Cheolho; Hwang, Han-Na; Hwang, Chan‐Cuk; Song, Hyun Jung; Shin, Hyun‐Joon; Chung, Sukmin; Park, Chong-Yun

doi:10.1002/adma.200602166

Cited by 7 publications

(10 citation statements)

References 20 publications

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“…Compared with heat and plasma, photons have the advantages of high spatial resolution and highly controlled scale of energy due to their unique characteristics, such as good monochromaticity and short wavelength [19][20][21]. Therefore, photons are a kind of potential energy for ACSM technology in the fabrication of ACS features.…”

Section: Introductionmentioning

confidence: 99%

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Wang

2021

Nanomanuf Metrol

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This paper presents a new approach for material removal on silicon at atomic and close-to-atomic scale assisted by photons. The corresponding mechanisms are also investigated. The proposed approach consists of two sequential steps: surface modification and photon irradiation. The back bonds of silicon atoms are first weakened by the chemisorption of chlorine and then broken by photon energy, leading to the desorption of chlorinated silicon. The mechanisms of photon-induced desorption of chlorinated silicon, i.e., SiCl2 and SiCl, are explained by two models: the Menzel–Gomer–Redhead (MGR) and Antoniewicz models. The desorption probability associated with the two models is numerically calculated by solving the Liouville–von Neumann equations for open quantum systems. The calculation accuracy is verified by comparison with the results in literatures in the case of the NO/Pt (111) system. The calculation method is then applied to the cases of SiCl2/Si and SiCl/Si systems. The results show that the value of desorption probability first increases dramatically and then saturates to a stable value within hundreds of femtoseconds after excitation. The desorption probability shows a super-linear dependence on the lifetime of excited states.

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Section: Introductionmentioning

confidence: 99%

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Wang

2021

Nanomanuf Metrol

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“…8,15 A chlorine monolayer on a silicon surface can also be utilized as a resist. 16,17 The key difference between a hydrogen and chlorine resist is the potential possibility to remove substrate atoms (Si) together with resist (Cl) atoms by the STM tip because of the strong interaction of chlorine with silicon. This claim is supported by a well-known etching effect that chlorine is shown on Si(100), studied both theoretically 18 and experimentally.…”

Section: ■ Introductionmentioning

confidence: 99%

“…A chlorine monolayer on a silicon surface can also be utilized as a resist. , The key difference between a hydrogen and chlorine resist is the potential possibility to remove substrate atoms (Si) together with resist (Cl) atoms by the STM tip because of the strong interaction of chlorine with silicon. This claim is supported by a well-known etching effect that chlorine is shown on Si(100), studied both theoretically and experimentally .…”

Section: Introductionmentioning

confidence: 99%

Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface

et al. 2019

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The homoepitaxial growth of Si on Si(100) covered by a resist mask is a necessary technological step for the fabrication of donor-based quantum devices with scanning tunneling microscope lithography. In the present work, the chlorine monolayer is selected as the resist. Using density functional theory, we investigated the adsorption of a single silicon atom on Si(100)-2×1-Cl as the starting process of Si epitaxy. The incorporation of a silicon atom under a Cl monolayer proved to be the most energetically favorable process. Our results show that chlorine segregates on the surface during Si deposition and does not incorporate into homoepitaxial layers. In addition, we found that SiCl * 2 , SiCl * 3 , and SiCl * 4 clusters can be formed above a Si(100)-2×1-Cl surface while Si is adsorbed. SiCl * 2 clusters are bound weakly to the substrate, and their desorption leaves the silicon surface free of chlorine. To check whether the Si epitaxy is possible on the chlorine resist, we compare our results with the well-studied case of a hydrogen resist. We find the two processes to be similar; moreover, epitaxy on chlorine resist appears to have an advantage.

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“…However, some problems unsolved still exist when using these new technologies. Among all the alternative lithography technologies, EUVL is the most promising candidate for the next‐generation lithography in industry, which can give the strong prospect of realizing 20 nm or even below 10 nm technology node . The devices and materials used for EUVL have attracted extensive interests due to their fascinating applications.…”

Section: Introductionmentioning

confidence: 99%

Molecular Glass Photoresists with High Resolution, Low LER, and High Sensitivity for EUV Lithography

Peng

Yuan

et al. 2018

Macro Materials & Eng

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Novel molecular glasses (MGs) containing bisphenol A backbone (BPA‐6 and BPA‐10) are synthesized and characterized. BPA‐6 and BAP‐10 are excellent amorphous materials for extreme ultraviolet (EUV) patterning applications with good thermal stability (Td more than 160 °C). The MGs can be used as positive‐tone photoresists combined with triphenylsulfonium perfluoro‐1‐butanesulfonate and trioctylamine dissolved in propylene glycol monomethyl ether acetate. High‐resolution feature sizes as small as 23.1 nm with extremely low line edge roughness (less than 2 nm), high sensitivity (less than 20 mJ cm−2), and good high aspect ratio patterns are obtained by using EUV lithography.

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Nanolayer Patterning Based on Surface Modification with Extreme Ultraviolet Light

Cited by 7 publications

References 20 publications

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface

Molecular Glass Photoresists with High Resolution, Low LER, and High Sensitivity for EUV Lithography

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