1989
DOI: 10.1016/0167-9317(89)90044-0
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Nanolithography at 350 KV in a TEM

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Cited by 29 publications
(17 citation statements)
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“…These microbridges are similar in nature to those observed through trans-mission electron microscope of thin lifted off patterns. 16 The increased sensitivity of the PMMA observed for the 2 m boxes was also observed in the fine lines. The exposure dose for the smallest, fully developed lines was 9.7 C/cm with ultrasonic agitation and 11.9 C/cm without ultrasonic agitation.…”
Section: B Fine Line Exposuresmentioning
confidence: 68%
“…These microbridges are similar in nature to those observed through trans-mission electron microscope of thin lifted off patterns. 16 The increased sensitivity of the PMMA observed for the 2 m boxes was also observed in the fine lines. The exposure dose for the smallest, fully developed lines was 9.7 C/cm with ultrasonic agitation and 11.9 C/cm without ultrasonic agitation.…”
Section: B Fine Line Exposuresmentioning
confidence: 68%
“…Electron beam lithography has also been used for hole drilling [31], contamination-induced growth [32], surface modification of inorganic materials (SiO 2 , AlF 3 , etc.) as well as Langmuir-Blodgett or self-assembled films [33,34].…”
Section: Electron Beam Lithographymentioning
confidence: 99%
“…45 The samples were developed in a methyl-isobutyl-ketone:isopropanol solution and then rinsed in isopropanol. Largescale contact pads and interconnects were created by optical lithography and liftoff of 1 nm of Ti and 50 nm of Au.…”
Section: Nanowire Samplesmentioning
confidence: 99%