Nanolithography with an atomic force microscope by means of vector-scan controlled dynamic plowing

Abstract

We present a nanolithography technique based on an atomic force microscope. A thin resist layer on the sample surface is plastically indented by a vibrating tip. Controlling of the vibration amplitude and tip movement enables one to plow a narrow furrow along line segments of arbitrary length and direction. Different line segments which form a complex pattern can be plowed at a scan speed up to 5 μm/s. The geometric distortion of the resist pattern is less than 50 nm, where at scan speed in excess of 1 μm/s an interrupt of at least 10 ms is necessary between the line segments. The minimum offset error in positioning a pattern with respect to existing features is less than 4% of the scanning field. The patterns are transferred into SiO2, Si, GaAs, Ti, and Au by wet-chemical etching. Minimum linewidth is 25 nm in 1.5 nm oxide layers, 75 nm in 10 nm Ti film and 40 nm in 10 nm Au. On semiconductor surfaces smooth and perfectly shaped V grooves of 55 nm width are obtained.

Atomic force microscopy-based repeated machining theory for nanochannels on silicon oxide surfaces

“…However, nanochannels on a hard silicon oxide substrate by AFM-based nano-lithography have not been reported. Though pattern on SiO 2 /Si surfaces [17] can be formed by transferring the AFM-generated resist structures through wet-chemical etching, operating is very complex and the nanochannel depth cannot be controlled precisely.…”

Galvanic Deposition of Gold on GaAs: A Tip-Induced Lithography Approach

“…Use of polymer masks to restrict reduction of gold on a specific area has been applied in most of static/dynamic plow-based lithography techniques. [16][17][18][19] In this work a simple three step process for a deposition of 50 nm wide and 10 nm high gold nanowires on GaAs semiconductor is described. This technique may allow the direct deposition of noble metals such as Au, Ag, or similar on GaAs semiconductor surface.…”

“…Subsequent exposure of the semiconductor surface to an Au(III) solution results in the deposition of gold by galvanic displacement reaction on pre-patterned defect areas. [16][17][18][19][20] have been demonstrated as useful approaches in the fabrication of metal structures on various surfaces.The metallization of semiconductor surfaces via the galvanic displacement reaction has been intensively investigated.2,21-23 Galvanic displacement deposition is a relatively simple redox reaction in which noble metal ions in solutions are reduced by the substrate resulting in growth of metal deposits with various surface morphologies. The surface morphology of electroless deposited metals depends on the substrate, composition of the electrolyte, including pH and conditions of deposition eg.…”

“…Subsequent exposure of the semiconductor surface to an Au(III) solution results in the deposition of gold by galvanic displacement reaction on pre-patterned defect areas. [16][17][18][19][20] have been demonstrated as useful approaches in the fabrication of metal structures on various surfaces.…”

“…[1][2][3][4][5][6][7] Metal structures on semiconductor surfaces have been produced using techniques such as photolithography, 7 electron beam lithography, 7,8 microcontact printing, 9,10 nanoimprint lithography, 11,12 soft lithographic nanopatterning. 13 Scanning probe-based lithography techniques such as superlattice nanowire pattern transfer, 14 dip pen 15 and static/dynamic plow lithography [16][17][18][19][20] have been demonstrated as useful approaches in the fabrication of metal structures on various surfaces.…”