Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation

Portavoce, A.; Hull, R.; Reuter, M. C.; Ross, Frances M.

doi:10.1103/physrevb.76.235301

Cited by 40 publications

(30 citation statements)

References 86 publications

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“…It is known that FIB milled holes are favored nucleation centers, 9,18 and an arrangement of dots similar to the underlying holes pattern is thus expected on patterned regions upon annealing. Nevertheless, in nonpatterned regions some degree of order is expected as well, as a consequence of the nucleation mechanism itself.…”

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confidence: 99%

“…In our case, where ⌬ / L Ϸ 0.3, we attribute deviations from the ideal case to the finite size of the dots and to the fact that their nucleation center is located either inside or beside the hole, depending on local nanotopography. 17,18 To prove this hypothesis, we model the experimental PDF using a twodimensional square lattice of points with a = 50 nm, much like the holes pattern prepared with FIB. To account for the finite dots size and uncertainty on nucleation site, we position a single dot at random in a 30 nm diameter circle centered on each lattice point.…”

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confidence: 99%

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A study of the pair distribution function of self-organized Ge quantum dots

Bernardi

Sgarlata

Fanfoni

et al. 2008

Applied Physics Letters

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We explore the use of the pair distribution function to study the self-organization process of Ge quantum dots on both nanopatterned and nonpatterned oxidized Si(001) surfaces. Dots formation and ordering upon annealing of a Ge thin film are analyzed. The method we use is not limited to this case study. We show how it can be applied to determine short and long range self-ordering of nanostructures. We support our results by applying a software routine to simulate patterns of dots to finally spot the relevant physical aspects of Ge islands self-assembly

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confidence: 99%

mentioning

confidence: 99%

A study of the pair distribution function of self-organized Ge quantum dots

Bernardi

Sgarlata

Fanfoni

et al. 2008

Applied Physics Letters

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“…The ion beam diameter is of order 50 nm. Atomically clean, electron transparent Si(100) samples are prepared using procedures previously described [6]. Growth of Ge QDs from digermane on unpatterned Si surfaces was performed at temperatures in the range 500-600 o C and typical digermane partial pressures ~ 10 -7 Torr.…”

Section: Methodsmentioning

confidence: 99%

Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

Hull

Floro

Gherasimova

et al. 2010

J. Phys.: Conf. Ser.

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Abstract. We employ focused ion beam patterning of single crystal Si(100) surfaces to template the assembly of Ge(Si) nanostructure arrays. The evolution and final structures of the templated arrays are determined by combinations of transmission electron, low energy electron microscope, focused ion beam and scanning probe microscopies. It is shown how the positions of individual nanostructures may be controlled to the order of 10 nm. However, to achieve controlled spacings between elements that are in the 10 nm range requires careful matching of the characteristic lengths scales of self assembly mechanisms to the length scales of the external lithographic "forcing functions".

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“…Thus a great challenge regarding the integration of QDs into devices like single photon sources [2][3][4] , semiconductor building blocks for information processing [5][6][7][8] or electron memory modules 9,10 is the precise control of the position of the QDs. Recently several groups succeeded in the growth of site-controlled QDs and their integration into microcavities [11][12][13][14][15][16][17] , but a complete characterization of the intrinsic parameters of these dots is still missing.…”

Section: Introductionmentioning

confidence: 99%

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

Reitzenstein

Schneider

Albert

et al. 2011

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

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Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites. The nanoholes are located relative to cross markers which allows for a precise spatial alignment of the site-controlled QDs (SCQDs) and the photonic modes of high quality microcavites with an accuracy better than 50 nm. We also address the optical quality of the SCQDs in terms of the single SCQD emission mode linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 µeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping layer we determine a quantum efficiency of the SCQD close to 50 % and an oscillator strength of about 10. Finally, single photon emission with associated with g (2) (0) = 0.12 of a weakly coupled SCQD -micropillar system will be presented.

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Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation

Cited by 40 publications

References 86 publications

A study of the pair distribution function of self-organized Ge quantum dots

A study of the pair distribution function of self-organized Ge quantum dots

Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

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