Nanometer-Scale In_0.5Ga_0.5As Ring-Like Structure Grown by Droplet Epitaxy

Abstract

We have demonstrated the fabrication of InGaAs ring-like nanostructures by dropletepitaxy technique using molecular-beam epitaxy. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. It was found that increasing substrate temperature resulted in larger InGaAs ring size but with lower density and that increasing In0.5Ga0.5 amount resulted in larger InGaAs ring size but with oscillating density. Photoluminescence results confirmed the high quality of the nanocrystal.

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

“…One merit of QRs is the magnetic properties, which is related to the possibility of inducting persistent currents [6]. Recently, we have studied the effects of substrate temperature during droplet formation on the InGaAs QRs, which mainly focus on the surface morphology characterization [7,8]. Besides, the photoluminescence (PL) characterization is another approach for investigating the properties of the droplet-epitaxy-grown QRs.…”

Quantum Nanostructures by Droplet Epitaxy

“…Isotropic strain gives rise to quantum rings (QRs) having circular and uniform ring dimension. [2] At some critical thickness, localized strains on the ring induce the quantum dot formation on the ring stripe. Quantum rings are then transformed to quantum dot rings (QDRs).…”