Nanometer-scale lithography on H-passivated Si(100) by atomic force microscope in air

Lee, Hai Tal; Oh, Jae Seuk; Park, Seong Ju; Park, Kang Ho; Ha, Jeong Sook; Yoo, Hyung Joun; Koo, Joonhoi

doi:10.1116/1.580560

Cited by 36 publications

(17 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was well known that an oxidation layer may be generated on the surface of the scratch area due to the tribochemical reaction. In the previous studies [ 12 - 15 ], such oxidation layer was believed to be the only mask structure on the scratch area. In fact, a thick distorted silicon layer including amorphous and deformed silicon may also be produced under the surface oxidation layer during the scratching process [ 11 , 17 ].…”

Section: Resultsmentioning

confidence: 99%

“…Due to the mechanical interaction and tribochemical reaction during scratching, the scratched area of the silicon surface may contain a superficial oxidation layer and the tip-disturbed silicon layer in the subsurface [ 11 ]. In the previous studies [ 12 - 15 ], some researchers suggested that the superficial oxygen-rich layer acted as a mask during KOH etching. Little attention has been paid to the tip-disturbed silicon layer in the subsurface [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication mechanism of friction-induced selective etching on Si(100) surface

Guo

Song

et al. 2012

Nanoscale Res Lett

View full text Add to dashboard Cite

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication mechanism of friction-induced selective etching on Si(100) surface

Guo

Song

et al. 2012

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…Mechanical friction has also been exploited using AFM in contact mode in air to fabricate silicon nanostructures on a H-passivated Si(100) substrate [34]. An AFM diamond tip sliding on a silicon surface formed protuberances on the substrate under ambient conditions [35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanofabrication by Atomic Force Microscopy-Based Mechanical Processing

Miyake¹,

Wang²,

Kim³

2014

Journal of Nanotechnology

View full text Add to dashboard Cite

This paper reviews silicon nanofabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nanofabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nanomechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

show abstract

“…SPM lithography can be used to fabricate nanoscale structures by various methods such as electrochemical oxidation [9][10][11], material transfer [12][13][14], mechanical removal [15][16][17][18][19] and thermal reaction [21,22]. This technique is effective for fabricating nanometer-scale structures.…”

Section: Spm-based Lithographymentioning

confidence: 99%