Nanometer scale thin-film-edge emitter devices with high current density characteristics

Akinwande,; Bauhahn,; Gray, Harriet; Ohnstein,; Holmen,

doi:10.1109/iedm.1992.307379

Cited by 9 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…LGaN (4) where Wd is the depletion layer width and h~f l is the scattering length. The assumption is that once the has collided with a phonon, it cannot be emitted.…”

Section: A L = E X P [ --] W Dmentioning

confidence: 99%

“…Recent developments in vacuum microelectronics have led to a resurgence of interest in cold cathode electron emission for applications to a variety of electronic devices [1,2,3,4]. The devices include microwave vacuum transistors and tubes [ 1,5], cathodoluminescent flat panel displays [6,7], magnetic sensors[8], lasers [9], pressure sensors[ 101, high temperature and radiation hardened electron devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Non-thermionic cathodes-solid state electron emitters based on GaN and LaB/sub 6/

Akinwande

Horning

Ruden

et al.

International Electron Devices Meeting. IEDM Technical Digest

View full text Add to dashboard Cite

We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve lowvoltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of La&. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide bandgap semiconductor into vacuum through an intermediary low workfunction material.Reliability Comments R eliable '

show abstract

“…LGaN (4) where Wd is the depletion layer width and h~f l is the scattering length. The assumption is that once the has collided with a phonon, it cannot be emitted.…”

Section: A L = E X P [ --] W Dmentioning

confidence: 99%