Nanometer silicon carbide powder synthesis and its dielectric behavior in the GHz range

Zhang, Bo; Li, Jianbao; Sun, Jingjing; Zhang, Shuxia; Zhai, Huazhang; Du, Zhengwei

doi:10.1016/s0955-2219(01)00248-5

Cited by 116 publications

(59 citation statements)

References 12 publications

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“…It was reported that doping of SiC with N (p-type) or B (p-type) or mental (Ti, Ni and Al) had better microwave dielectric loss in the X-band than that obtained pure SiC [8][9][10][11][12]. Silicon carbonitride (Si-C-N) ceramic is a promising material [13] for its attractive properties, such as corrosion resistance, high temperature oxidation resistance, hardness and wide band gap [14][15][16]. Besides, the electronic band gap of 3.8 eV indicates the wide band-gap dielectric of this material [17].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Liu

et al. 2014

Ceramics International

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Section: Introductionmentioning

confidence: 99%

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Liu

et al. 2014

Ceramics International

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“…In another study, it was found that high-frequency dielectric loss of certain SiC composites decreases with increasing concentrations of aluminum and nitrogen dopants in the SiC (Zhang et al, 2002). These results can be understood in terms of the proposed underlying mechanism of dielectric loss in SiC: dipole relaxation and/or reorientation of vacancy (V C -V Si ) and antisite (Si C -C Si ) defect pairs.…”

Section: Effects Of Whisker Defect Structures and Interfaces On Variomentioning

confidence: 94%

Properties and Applications of Ceramic Composites Containing Silicon Carbide Whiskers

Bertram¹,

Gerhardt²

2011

Properties and Applications of Silicon Carbide

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“…Furthermore, higher temperatures support the endothermic reaction so that the gas formation is more vigorous. A rapid gas formation is believed to promote the development of small crystals 3,10 .…”

Section: Sio(g)+2c(s) →Sic(s)+co(g)mentioning

confidence: 99%

SYNTHESIS OF NANOSIZE SILICON CARBIDE POWDER BY CARBOTHERMAL REDUCTION OF SiO₂

Dehghanzadeh

Ataie

Heshmati-Manesh

2012

Int. J. Mod. Phys. Conf. Ser.

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A mixture of silicon carbide nano-particles and nano-whiskers has been synthesized through solid state reduction of silica by graphite employing high energy planetary ball milling for 25 h and subsequent heat treatment at 1300-1700°C in dynamic argon atmosphere. Effects of process conditions on the thermal behavior, phase composition and morphology of the samples were investigated using DTA/TGA, XRD and SEM, technique, respectively. DTA/TGA analysis shows that silicon carbide starts to form at ~ 1250°C. Analysis of the XRD patterns indicates that the phase composition of the sample heat treated at 1300°C for 2 h mainly consists of SiO2 together with small amount of β-SiC. Nano-crystalline silicon carbide phase with a mean crystallite size of 38 nm was found to be dominate phase on heat treatment temperature at ~ 1500°C. Substantial SiO2 was still remained in the above sample. SEM studies reveal that the sample heat treated at 1500°C for 2 h contains nano-particles and nano-whisker of β-SiC with a mean diameter of almost ~ 85 nm. The results obtained were also showed that the characteristics of the synthesized SiC particles strongly depend on the mechanical activation and heat treatment conditions.

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Nanometer silicon carbide powder synthesis and its dielectric behavior in the GHz range

Cited by 116 publications

References 12 publications

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Properties and Applications of Ceramic Composites Containing Silicon Carbide Whiskers

SYNTHESIS OF NANOSIZE SILICON CARBIDE POWDER BY CARBOTHERMAL REDUCTION OF SiO₂

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Nanometer silicon carbide powder synthesis and its dielectric behavior in the GHz range

Cited by 116 publications

References 12 publications

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Thermodynamic calculations and kinetic verifications on the chemical vapor deposition process of Si–C–N ceramic from the SiCl3CH3–NH3–H2–Ar precursors

Properties and Applications of Ceramic Composites Containing Silicon Carbide Whiskers

SYNTHESIS OF NANOSIZE SILICON CARBIDE POWDER BY CARBOTHERMAL REDUCTION OF SiO2

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SYNTHESIS OF NANOSIZE SILICON CARBIDE POWDER BY CARBOTHERMAL REDUCTION OF SiO₂