Nanometer transistors for emission and detection of THz radiation

Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation

“…(9), (10), (14), and (15). In the practically important case jd ox (1, it is reduced down to ðmpÞ 2 ¼ i Á 2ðjd ox Þ 2 .…”

“…The performed modeling describes successfully many detector properties. [2][3][4][5][6]14,15,19,[22][23][24][25][26]29,30,32,33 However, it ignores the wave magnetic field in FET, and a further modeling development requires to take it into account. It is necessary to find the ohmic loss in FET and wave impedance.…”

“…For this inversion, current in the channel has a drift character, [34][35][36][37][38] and in the assumed conditions equalities (15) and ql n C n0 ¼ ag D =b take place. Note that, at strong inversion, the Maxwell relaxation time in the channel can be less than 1/ and ensures the quasi-stationary state for any time s nDif .…”

Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate Hemt's

“…The samples were placed in the source position of the vacuum cavity of the FTIR. The radiation intensity was measured by Si bolometer having a responsivity of 5 10 84 . 2 × V/W and a noise-equivalent power (NEP) 13 10 16 .…”

“…In the last decade, then therefore, development of compact, tunable and coherent sources operating at terahertz frequencies has been one of the hottest issues of the modern terahertz (THz) electronics 1 . Two dimensional (2D) plasmons in submicron transistors have attracted much attention due to their nature of promoting emission of electro-magnetic radiation in the terahertz range [2][3][4][5] . We have recently proposed and fabricated a highly efficient, broadband plasmonresonant terahertz emitter/photomixer device [6][7][8][9][10][11] .…”