2005
DOI: 10.1016/j.susc.2005.03.039
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Nanoparticles in interlayers of Bi2O3-doped ZnO ceramics

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Cited by 5 publications
(2 citation statements)
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“…A loss of 19 wt% of Bi 2 O 3 has been recorded for the process conducted at 1,150 °C for 90 min by emission spectroscopy [20][21][22]. The other reports found that all interlayers in Bi-doped polycrystalline ZnO take on a thin, amorphous and rich nanostructure phase structure after being annealed above eutectic temperature [23].…”
Section: Introductionmentioning
confidence: 99%
“…A loss of 19 wt% of Bi 2 O 3 has been recorded for the process conducted at 1,150 °C for 90 min by emission spectroscopy [20][21][22]. The other reports found that all interlayers in Bi-doped polycrystalline ZnO take on a thin, amorphous and rich nanostructure phase structure after being annealed above eutectic temperature [23].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide has a wide bandgap of 3.3 eV at room temperature and forms a wurzite structure, which is an n-type semiconductor material with both good electronic and optical properties because of a deviation from the stoichiometry owing to the existence of intrinsic defects such as O vacancies and Zn interstitials [4,5] . Many studies have been conducted on the sintering of several doped ZnO systems, such as Sb-doped ZnO [6,7] , Bi-doped ZnO [8] , Mn-doped ZnO [9] and Al-doped ZnO [10,11] . Among these studies the doping of Al in ZnO showed conductivity enhancement along with improved transparency [12,13] , and the resulting material is regarded as a potential candidate as the substitutes for indium-tin-oxide (ITO) materials [14] .…”
Section: Introductionmentioning
confidence: 99%