Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

Choi, Du Young; Kuru, Cihan; Choi, Chulmin; Noh, Kunbae; Hong, Soonkook; Das, Santanu; Choi, Wonbong; Jin, Sung‐Ho

doi:10.1080/21663831.2013.876676

Cited by 12 publications

(4 citation statements)

References 53 publications

(64 reference statements)

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“…5 Lithographic methods can be used to achieve precisely located nano/ micropatterning and cutting on graphene; various techniques exist, e.g., helium ion microscope lithography, 6 resist-free soft lithography 7 and block copolymer lithography. 8 These involve a long sequence of process operations, which may also increase the risk of polymeric contamination. Femtosecond laser micromachining has the advantages of limited thermal effects, high processing speed, 9 and capability to machine complex shapes.…”

Section: Introductionmentioning

confidence: 99%

Evaluating femtosecond laser ablation of graphene on SiO2/Si substrate

Dong

Sparkes

Durkan

et al. 2016

Journal of Laser Applications

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We demonstrate a uniform single layer micropattern of graphene on 300 nm thick SiO 2 on a Si substrate using a 1030 nm, 280 fs laser. The cutting process was conducted in air, the pattern defined through the motion of a high-precision translation stage. Approximately 1.6 lm wide graphene microchannels were cut with uniform widths and well defined edges. The ablation threshold of graphene was determined to be 66-120 mJ/cm 2 , at which the selective removal of graphene was achieved without damage to the SiO 2 /Si substrate. Scanning electron microscopy images revealed high quality cuts (standard deviation 40 nm) with little damage or re-deposition. Raman maps showed no discernible laser induced damage in the graphene within the ablation zone. Atomic force microscopy revealed an edge step height ranging from less than 2 to 10 nm, suggesting little removal of SiO 2 and no damage to the silicon (the central path showed sub ablation threshold swelling). The effect of the ultrafast laser on the surface potential at the cut edge has been measured and it showed a distinguishable boundary. V

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Section: Introductionmentioning

confidence: 99%

Evaluating femtosecond laser ablation of graphene on SiO2/Si substrate

Dong

Sparkes

Durkan

et al. 2016

Journal of Laser Applications

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“…Here, the sidewalls are preferentially wetted by one block, causing the cylinders to align with the sidewall direction, a technique known as graphoepitaxy [36]. DSA is of considerable interest if the patterns are to be used for the creation of nanoelectronic devices [37,38]. This thicker film clearly shows the hexagonal type arrangement of the PDMS cylinders.…”

Section: Resultsmentioning

confidence: 99%

The Morphology of Ordered Block Copolymer Patterns as Probed by High Resolution Imaging

Borah

Ghoshal

Shaw

et al. 2014

Nanomaterials and Nanotechnology

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The microphase separation of block copolymer (BCP) thin films can afford a simple and cost-effective means to studying nanopattern surfaces, and especially the fabrication of nanocircuitry. However, because of complex interface effects and other complications, their 3D morphology, which is often critical for application, can be more complex than first thought. Here, we describe how emerging microscopic methods may be used to study complex BCP patterns and reveal their rich detail. These methods include helium ion microscopy (HIM) and high resolution x-section transmission electron microscopy (XTEM), and complement conventional secondary electron and atomic force microscopies (SEM and TEM). These techniques reveal that these structures are quite different to what might be expected. We illustrate the advances in the understanding of BCP thin film morphology in several systems, which result from this characterization. The systems described include symmetric, lamellar forming polystyrene-b-polymethylmethacrylate (PS-b-PMMA), cylinder forming polystyrene-b-polydimethylsiloxane (PS-b-PDMS), as well as lamellar and cylinder forming patterns of polystyrene-b-polyethylene oxide (PS-b-PEO) and polystyrene-b-poly-4-vinylpyridine (PS-b-P4VP). Each of these systems exhibits more complex arrangements than might be first thought. Finding and developing techniques whereby complex morphologies, particularly at very small dimensions, can be determined is critical to the practical use of these materials in many applications. The importance of quantifying these complex morphologies has implications for their use in integrated circuit manufacture, where they are being explored as alternative pattern forming methods to conventional UV lithography.

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“…Then, oxygen plasma (30 W, 150 mTorr) was applied through the AAO template holes to etch and create pores on the graphene. The details of recipes and procedures for the formation of NPG were explained in previous study [ 13 ].…”

Section: Methodsmentioning

confidence: 99%

“…To advance a facile process technique for nanopatterned graphene (NPG), we have specifically utilized an anodic aluminum oxide (AAO) lithography as it can be scaled to large-area substrates with high fidelity of patterning, which can be compatible with conventional lithographic processes [ 13 , 14 ]. With an array of nanoholes introduced, the sheet resistance obviously becomes deteriorated due to a lost material pathway.…”

Section: Introductionmentioning

confidence: 99%

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

et al. 2015

Self Cite

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We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG. The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm. The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width. Electronic characterization of single-layer NPG field-effect transistors (FETs) was performed, which demonstrated a high on-off switching ratio. We found that the NPG allows for experimental confirmation of the relationship between electrical conductance and bandgap. This work also demonstrates that our direct-contact, self-assembled mask lithography is a pathway for low-cost, high-throughput, large-scale nanomanufacturing of graphene nanodevices.

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Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

Cited by 12 publications

References 53 publications

Evaluating femtosecond laser ablation of graphene on SiO2/Si substrate

Evaluating femtosecond laser ablation of graphene on SiO2/Si substrate

The Morphology of Ordered Block Copolymer Patterns as Probed by High Resolution Imaging

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

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