2012
DOI: 10.1364/oe.21.000a42
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Nanophotonic light trapping in 3-dimensional thin-film silicon architectures

Abstract: Emerging low cost and large area periodic texturing methods promote the fabrication of complex absorber structures for thin film silicon solar cells. We present a comprehensive numerical analysis of a 2 μm square periodic polycrystalline silicon absorber architecture designed in our laboratories. Simulations are performed on the basis of a precise finite element reconstruction of the experimentally realized silicon structure. In contrast to many other publications, superstrate light trapping effects are includ… Show more

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Cited by 21 publications
(11 citation statements)
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“…Their structure showed a larger absorption enhancement from a backside 2D grating as compared with similar designs in 2 and 5 μ m silicon films owing to reduced parasitic losses. Similar conclusions were found in the study of a 2.4 μ m-thick polycrystalline periodic nanodome architecture formed by electron beam evaporation and annealing of silicon on a periodically patterned sol-gel surface [ 75 ]. Light trapping in the structure was predicted to operate near the 4n 2 limit when the cell was sandwiched between lossless transparent conductive oxide contacts.…”
Section: Figuresupporting
confidence: 77%
“…Their structure showed a larger absorption enhancement from a backside 2D grating as compared with similar designs in 2 and 5 μ m silicon films owing to reduced parasitic losses. Similar conclusions were found in the study of a 2.4 μ m-thick polycrystalline periodic nanodome architecture formed by electron beam evaporation and annealing of silicon on a periodically patterned sol-gel surface [ 75 ]. Light trapping in the structure was predicted to operate near the 4n 2 limit when the cell was sandwiched between lossless transparent conductive oxide contacts.…”
Section: Figuresupporting
confidence: 77%
“…The most common nanostructures for light-trapping are periodic [9,31,[36][37][38]. Periodic structures are typically defined by the period (P UC ) of the unit cell (UC), the filling fraction of air holes into the active material ( f UC ) and the shape of the holes, for example, the width of inverted pyramids (W UC ) (cf.…”
Section: Methodsmentioning
confidence: 99%
“…Some of the optical analysis samples were prepared by solid phase crystallization by thermal annealing of amorphous silicon at 600 °C since it is a fast and easy process and optical material properties do not differ from LPC silicon in the wavelength range of interest being well below 900 nm. 21 Optical characterization was performed using a Perkin Elmer LAMBDA 1050 spectrometer featuring an integrating sphere. Open circuit-voltages (Voc) were obtained by Suns-Voc measurements carried out at room temperature using a SunsVoc unit of a WCT-100 photoconductance lifetime tool by Sinton Instruments.…”
Section: Methodsmentioning
confidence: 99%