Nanophotonics contributions to state-of-the-art CMOS Image Sensors

Yokogawa, Sozo

doi:10.1109/iedm19573.2019.8993560

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…Numerous demosaicing algorithms have been proposed, and one example is shown in Figure 1 a. Furthermore, various integration technologies of CFA-based CMOS image sensor have been developed [ 18 , 19 , 20 , 21 , 22 ]. Nevertheless, due to the lack of information during the demosaicing process, the original color cannot be fully expressed [ 23 ].…”

Section: Digital Image Sensor Technologymentioning

confidence: 99%

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Park

Choi

et al. 2022

Sensors

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In this study, a non-linear hue–wavelength (H-W) curve was investigated from 400 to 650 nm. To date, no study has reported on H-W relationship measurements, especially down to the 400 nm region. A digital camera mounted with complementary metal oxide semiconductor (CMOS) image sensors was used. The obtained digital images of the sample were based on an RGB-based imaging analysis rather than multispectral imaging or hyperspectral imaging. In this study, we focused on the raw image to reconstruct the H-W curve. In addition, several factors affecting the digital image, such as exposure time or international organization for standardization (ISO), were investigated. In addition, cross check of the H-W response using laser was performed. We expect that our method will be useful as an auxiliary method in the future for obtaining the fluor emission wavelength information.

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Section: Digital Image Sensor Technologymentioning

confidence: 99%

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Park

Choi

et al. 2022

Sensors

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“…[1][2][3] Hence, three-dimensional stacked CMOS image sensors (3D-CISs) have been developed. 4,5 In a 3D-CIS, the pixel part and the pixel data processing function are manufactured on separate wafers, and the wafers are bonded by Cu-Cu hybrid bonding or through silicon via (Cu-TSV). [6][7][8] However, if the barrier layer formed between the wafers bonded by Cu-Cu hybrid bonding is insufficient to prevent the diffusion of Cu, there is a concern of cause Cu contamination.…”

mentioning

confidence: 99%

Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

Okuyama,

Kadono,

Onaka-Masada

et al. 2024

ECS J. Solid State Sci. Technol.

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The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important for improving the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit and Pb0 center density in SiO2/Si interface regions, as analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. Both Dit and Pb0 center density in the CH3O-implanted wafer decreased with increasing heat treatment temperature. Moreover, the activation energy is estimated to be 1.57 eV for the hydrogen termination reactions induced by the CH3O-ion-implanted wafer. The activation energy is close to those of hydrogen molecules and Si dangling bonds at the SiO2/Si interface. The termination effect of the CH3O-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.

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Optical rectification in self-assembled quantum dots: The role of incoherent pumping

Portacio

Cano

Causil

2021

Superlattices and Microstructures

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Nanophotonics contributions to state-of-the-art CMOS Image Sensors

Cited by 6 publications

References 8 publications

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

Optical rectification in self-assembled quantum dots: The role of incoherent pumping

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Nanophotonics contributions to state-of-the-art CMOS Image Sensors

Cited by 6 publications

References 8 publications

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor

Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors

Optical rectification in self-assembled quantum dots: The role of incoherent pumping

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Product

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Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors