regenerated much attention to the search for phases that do not exist in the parent bulk materials. [1] Structures such as vortex pairs, super-tetragonal phase, and polar skyrmions have been experimentally reported. [2][3][4][5][6][7][8] In essence, the formation of ferroelectric domain structures strongly relies on the balance between electrostatic and elastic energies which is sensitively affected by film thickness, substrate mismatch strain, depolarization field, cooling rate, etc. [9][10][11][12][13] Previous works have both experimentally and theoretically studied the size and strain effects in ferroelectric thin films; however, continuously manipulating the strain or tuning the dimensionality without the influence of strain is rarely achieved due to the substrate clamping. [14][15][16][17][18][19] In order to stabilize and manipulate domain structures in ferroelectrics which usually depend on precise control of strain and thickness, as well as to understand the intrinsic evolution of ferroelectricity and domain structures, it is essential to investigate freestanding films that are free of substrate constraints and allow in situ and continuous strain engineering.In principle, several ways are feasible to prepare freestanding films, including the mechanical polishing to micrometer scales, [20][21][22] etching rigid substrates, [23] and "grow-transfer" multi-step methods (first growing films on rigid substrates, and then transferring to other substrates). [24][25][26][27] These techniques are highly selective or difficult to generalize to a wide range of perovskite oxides. Recently, Lu et al. [28] reported a new way to synthesize high-quality freestanding perovskite oxides using water-soluble Sr 3 Al 2 O 6 (SAO) as a sacrificial buffer layer, allowing the synthesis of high-crystalline-quality freestanding films, [29,30] even down to the monolayer limit. [31] Herein, we synthesize freestanding PbTiO 3 (PTO) films with thicknesses from 60 to 4 unit cells (u.c.), showing single-crystalline c-axis oriented domain. The tetragonality and ferroelectricity are suppressed with the decreasing of film thickness, and at the same time, by applying uniaxial tensile strain up to 6.4% along a-axis, we flip the long axis (c-axis) into [100] direction and observe the switchable behavior of these a domains. Our work demonstrates that giant uniaxial strain can be achieved continuously in the freestanding films, paving the way for the usage of high electromechanical conversion efficiency actuators, such as Dimensionality and epitaxial strain have been recently utilized to engineer the interplay between the electrostatic and elastic energies to stabilize exotic ferroelectric domain structures and topological textures in epitaxial heterostructures and superlattices. As the strain state is fixed to the substrate lattice, the strain tunability is discrete and limited, which puts a hard constraint on the exploration and engineering of emergent ferroelectric properties in these thin films and heterostructures. Here, by using water-solub...