Nanoscale charge transport and local surface potential distribution to probe the defect passivation in Cr-substituted earth abundant CZTS absorber layer

Kaur, Kulwinder; Nisika,; Chowdhury, Ashraful Haider; Qiao, Qiquan; Kumar, Mukesh

doi:10.1016/j.jallcom.2020.157160

Cited by 29 publications

(11 citation statements)

References 52 publications

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“…38 The peak at 550 cm −1 corresponds to the Se chain that appeared due to second-order Raman scattering. 39 The change in ternary phase intensity could be attributed to chemical bonding rearrangements caused by the change in composition, which alters the material's optical behaviour. The peak intensity variation as a function of Bi/In concentration indicates structural rearrangement within the matrix.…”

Section: Resultsmentioning

confidence: 99%

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Priyadarshini,

Senapati,

Mohapatra

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Priyadarshini,

Senapati,

Mohapatra

et al. 2024

J. Mater. Chem. C

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“…Therefore, interface engineering is primarily needed to reduce the recombination at the interface. Methods such as etching, [119,120] doping, [121,122] postheat treatment, [123,124] and inserting a passivation layer at the buffer/absorber interface [124,125] can diminish the interface defects. Overall, the proposed methods and strategies may assist the PV community to practically achieve excellent solar cell performance with the diverse emerging chalcogenide absorbers and novel ZrS 2 buffer.…”

Section: Suggestions To Improve the Solar Cell Performance In Practic...mentioning

confidence: 99%

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Arockiya-Dass,

Sekar,

Marasamy

2023

Energy Tech

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SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 are emerging as promising light absorbers for thin‐film photovoltaics due to their extraordinary optoelectronic properties. However, improper band alignment with the buffer and large open‐circuit voltage (VOC) deficit limits their power conversion efficiencies (PCE). Therefore, finding a suitable buffer that overcomes these obstacles is crucial. Herein, ZrS2 as an alternative buffer for the aforementioned emerging thin‐film solar cells using SCAPS‐1D is proposed. The important ZrS2 parameters are optimized, including bandgap, thickness, carrier concentration, and defect density. Interestingly, ZrS2 behaves as a degenerate semiconductor at carrier concentrations >1E17 cm−3, improving the conductivity of the solar cells; it also demonstrates a high defect tolerance nature when the defect density lies between 1E12 and 1E18 cm−3. After ZrS2 parameters optimization, the built‐in potential of SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 solar cells is enhanced by 0.2, 0.58, 0.05, 0.42, and 0.3 V, respectively, reducing recombination rate. Upon optimizing absorbers parameters, a PCE > 35% for SnS, Sb2Se3, and CuSb(S,Se)2 while >32% for Cu2SnS3 and Cu2BaSn(S,Se)4 solar cells is accomplished with low VOC loss (≈0.1 V). The absorbers must have high carrier concentration (1E20 cm−3) and low defect density (1E14 cm−3) to achieve these PCEs.

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“…With the conductivity data of tables 7 and 8, four mathematical models were adjusted by means of least squares equations ( 8) and ( 9), by ordinary differential equations dC/dT = kC(n − C), where (C) is the conductivity, (k) is constant of proportionality, (t) is the temperature and (n) maximum value of conductivity observed experimentally [40,41]. When solving it and using the initial conditions of conductivity given in the tables 8 and 9, equations (10) and (11) are obtained.…”

Section: Mathematical Models and Graphs Of The Conductivity Of Cztis ...mentioning

confidence: 99%

Mathematical modelling of the conductivity in CZTiS-CZSnS as a function of synthesis temperature

Mesa

Báez

Cerón-Achicanoy

et al. 2021

J. Phys.: Condens. Matter

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The electrical behavior of photovoltaic materials related with Cu2ZnTiS4 and Cu2ZnSnS4 materials were analyzed as function of synthesis temperature in accordance with a new mathematical model based on the Kramers–Kronig equations with a high reliability. The samples were obtained through a hydrothermal route and a subsequent thermal treatment of solids at 550 °C for 1 h under nitrogen flow (50 ml min−1). The characterization was done by x-ray diffraction, ultraviolet spectroscopy (UV), Raman spectroscopy, atomic force microscopy (AFM) and solid state impedance spectroscopy (IS) techniques. The structural characterization, confirm the obtention of a tetragonal material with spatial group I-42m, oriented along (1 1 2) facet, with nanometric crystal sizes (5–6 nm). The AFM and Raman analysis confirm a high level of chemical homogeneity and correlation with the synthesis temperature, associated with the roughness of the samples. The UV spectroscopy confirm a band gap around 1.4–1.5 eV, evidencing the effectiveness of the synthesis process. The IS results at room temperature with a probability of 95%, confirm a high consistency of data with respect to values of real and imaginary impedance, allowing to obtain information of the conductance, reactance and inductance, achieving conductivity values around 10−5 and 10−3 Ω−1 m−1 in comparison with traditional mathematical models used for this purpose.

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Nanoscale charge transport and local surface potential distribution to probe the defect passivation in Cr-substituted earth abundant CZTS absorber layer

Cited by 29 publications

References 52 publications

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Mathematical modelling of the conductivity in CZTiS-CZSnS as a function of synthesis temperature

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Nanoscale charge transport and local surface potential distribution to probe the defect passivation in Cr-substituted earth abundant CZTS absorber layer

Cited by 29 publications

References 52 publications

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBixIn1−xSe2 for photo response applications

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBixIn1−xSe2 for photo response applications

Theoretical Insights of Degenerate ZrS2 as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Mathematical modelling of the conductivity in CZTiS-CZSnS as a function of synthesis temperature

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Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBi_xIn_1−xSe₂ for photo response applications

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells