2009 International Semiconductor Device Research Symposium 2009
DOI: 10.1109/isdrs.2009.5378032
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Nanoscale depth-resolved electronic properties of SiO<inf>2</inf>/SiO<inf>x</inf>/SiO<inf>2</inf> gate dielectrics for radiation-tolerant electronics

E. J. Katz
1
,
Z. Zhang
2
,
H.L. Hughes
3
et al.
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