Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications

Saket, Omar; Himwas, C.; Piazza, Valerio; Bayle, Fabien; Cattoni, Andréa; Oehler, Fabrice; Patriarche, G.; Travers, Laurent; Collin, Stéphane; Julien, F. H.; Harmand, Jean-Christophe; Tchernycheva, Maria

doi:10.1088/1361-6528/ab62c9

Cited by 15 publications

(15 citation statements)

References 54 publications

(87 reference statements)

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“…Indeed, for a forward bias, a dark contrast is observed in the vicinity of the contact point (cf. figure S2 in Supplementary Material), proving the Schottky nature of the contact [62]. This Schottky barrier can be flattened by applying a negative bias thus revealing the p-n junction signal.…”

Section: Ebic Characterization Of Gan N-base and P-base P-n Junction Nanowiresmentioning

confidence: 75%

Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

et al. 2020

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We analyse the electrical and optical propreties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the Mg doping leads to a mixed axial-radial behavior with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 10 18 cm -3 was extracted from electron beam induced current mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.

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Section: Ebic Characterization Of Gan N-base and P-base P-n Junction Nanowiresmentioning

confidence: 75%

Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

et al. 2020

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“…Наименее подверженной этим недостаткам является система Ga(As, P) [8,14]. Сами ННК Ga(As, P) являются перспективным материалом для тандемных солнечных элементов с кремнием [15]. Также на основе ННК Ga(As, P) можно создавать светодиоды, излучающие в красном и ближнем инфракрасном диапазонах от 630 до 870 нм.…”

Section: полупроводниковыеunclassified

Точная модель самокаталитического роста нитевидных нанокристаллов Ga(As, P)

Сибирев¹,

Бердников²,

Федоров³

et al. 2021

Физика И Техника Полупроводников

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Предложена модель для расчета состава самокаталитических нитевидных нанокристаллов, не содержащая подгоночных параметров. Показано, что состав нитевидных нанокристаллов Ga(As, P) не зависит от скорости роста при фиксированном отношении суммарных потоков атомов V и III групп. Результаты моделирования хорошо согласуются с экспериментально наблюдаемой зависимостью состава нитевидных нанокристаллов от соотношения потоков атомов As и P. Ключевые слова: нитевидные нанокристаллы Ga(As,P), молекулярно-пучковая эпитаксия, самокаталитический рост, количественный расчет состава.

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“…Nanowires (NWs) of III–V semiconductors, with diameters of a few tens of nanometers and lengths up to several micrometers, have remarkable physical properties, which open large prospects of original applications. − Many of these, however, require a precise control of the NW geometry. This is for instance the case in devices relying on quantum confinement, which can be obtained by inserting thin disks along the NW axis; in addition, lateral confinement may occur in very thin NWs. , …”

Section: Introductionmentioning

confidence: 99%

Dynamics of Droplet Consumption in Vapor–Liquid–Solid III–V Nanowire Growth

Pishchagin

Patriarche

Cattoni

et al. 2021

Crystal Growth & Design

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We study experimentally and theoretically the consumption of the apical gallium droplet that mediates the self-catalyzed vapor-liquid-solid growth of GaP nanowires. Consumption is achieved after growth by providing only phosphorous and its progress is monitored ex situ in nanowire arrays fabricated by molecular beam epitaxy. We develop detailed calculations of the process, taking into account four channels of liquid gallium consumption. These include the formation of GaP using phosphorous delivered to the droplet by direct impingement or after re-emission from the substrate. We show that two other channels contribute significantly, namely the diffusion of phosphorous along the sidewalls and gallium back diffusion from the droplet. All currents are calculated analytically as a function of droplet geometry. Complementary experiments are performed to extract the two model parameters governing the diffusion currents. We then compute numerically the dynamics of the system exposed to a constant external phosphorous flux. Our quantitative model allows one to predict how droplet contact angle and radius change while operating blindly in a standard epitaxy chamber. Controlling these parameters is crucial for tailoring the crystal phase of III-V nanowires and fabricating quantum size structures.

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Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications

Cited by 15 publications

References 54 publications

Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

Точная модель самокаталитического роста нитевидных нанокристаллов Ga(As, P)

Dynamics of Droplet Consumption in Vapor–Liquid–Solid III–V Nanowire Growth

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