Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

Wang, Liming; Zhang, Yichi; Sun, Hao; You, Jinhong; Miao, Yuyang; Dong, Zuoru; Liu, Tao; Jiang, Zuimin; Hu, Huiyong

doi:10.1039/d0na00680g

Cited by 13 publications

(3 citation statements)

References 51 publications

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“…Also, the use of different substrates was seen to not affect the composition or thickness of the deposited films. It is theoretically proven that equilibrium is reached after the first few atomic layers of SiGeSn are grown and hence the type of substrate has no influence on the bulk composition and thicknesses [31]. The reactions and the atomic transport theories at the interface are discussed later in this paper.…”

Section: Effect Of Substrate On Sigesn Filmmentioning

confidence: 98%

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

Hariharan¹,

Vanjaria²,

Arjunan³

et al. 2021

CSTA

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In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacuum (UHV) conditions with pressures ranging from 10 −8 torr to 10 −10 torr which makes high volume manufacturing very expensive. On the contrary, the use of lowpressure CVD processes (vacuum levels of 10 −2 torr to 10 −4 torr) is economically more viable and yields faster deposition of SiGeSn films. This study outlines the use of a cost-effective Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor to study the impact of substrate temperature and substrate type on the growth and properties of polycrystalline SiGeSn films. The onset of polycrystallinity in the films is attributed to the oxygen-rich PECVD chamber conditions explained using the Volmer-Weber (3D island) mechanism. The properties of the films were characterized using varied techniques to understand the impact of the substrate on film composition, thickness, crystallinity, and strain.

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Section: Effect Of Substrate On Sigesn Filmmentioning

confidence: 98%

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

Hariharan¹,

Vanjaria²,

Arjunan³

et al. 2021

CSTA

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“…For example, with a Sn concentration of ~9 at.%, GeSn shows a transition to a direct bandgap material from an indirect band gap Ge. Among the reported Ge alloys, such as GeSn [ 126 ], SiGe [ 230 ], SiGeSn [ 231 , 232 ], only GeSn nanowires have been successfully grown to date through a self-seeded growth mechanism [ 126 ]. Adding α-Sn (grey tin, α Sn allotrope with diamond cubic structure) into the Ge lattice results in an energy difference between the Γ and L valleys (ΔE Γ–L ) that decreases as the Sn content increases, leading to the formation of a direct band gap material at between 6 and 10 at.% Sn content.…”

Section: Growth Of Self-seeded Ge Nanowire Alloysmentioning

confidence: 99%

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

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Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

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“…Some questions are devoted to Ge dewetting from Si(111) at high temperatures [ 40 ], strain relaxation [ 41 ], and formation of dislocations [ 42 , 43 ]. Moreover, Si(111) surface is used for epitaxy of GeSn [ 44 ] and SiGeSn [ 45 ] solid solution, as well as non-group-IV materials, for example, Au [ 46 , 47 ], Ga [ 48 ], GaN [ 49 , 50 ], GaSb [ 51 ] Bi 2 Te 3 [ 52 ], Se [ 53 ], etc. Finally, it is precisely on surfaces with crystallographic orientation (111) that it is possible to create graphene-like two-dimensional materials [ 48 , 52 , 54 , 55 , 56 ], which are highly anticipated for creating electronics of the future [ 57 , 58 ].…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

et al. 2023

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This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.

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Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

Abstract: Here, SiGeSn nanostructures were grown via molecular beam epitaxy on a Si (111) substrate with the assistance of Sn droplets. Owing to the thermal effect and the compressive strain induced...

Cited by 13 publications

References 51 publications

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

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