Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Takei, Kuniharu; Madsen, Morten; Fang, Hui; Kapadia, Rehan; Chuang, Steven S. C.; Kim, Ha Sul; Liu, Chin‐Hung; Plis, E.; Nah, Junghyo; Krishna, S.; Chueh, Yu‐Lun; Guo, Jing; Javey, Ali

doi:10.1021/nl300228b

Cited by 89 publications

(84 citation statements)

References 28 publications

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“…The bottom-gate transistors (Si as the back gate) were first characterized via electrical transport measurements before being subjected to atomic-layer deposition (ALD) of a ZrO 2 film (κ ≈ 12) for a single nanotube channel transistor using a tetrakis (ethylmethylamido) zirconium precursor and water at 130°C. 24 After that, Pd gate electrodes were patterned for the top-gate structures. A schematic of the device structure is shown in Figure 1a.…”

Section: Resultsmentioning

confidence: 99%

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

et al. 2012

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We develop short-channel transistors using solutionprocessed single-walled carbon nanotubes (SWNTs) to evaluate the feasibility of those SWNTs for high-performance applications. Our results show that even though the intrinsic field-effect mobility is lower than the mobility of CVD nanotubes, the electrical contact between the nanotube and metal electrodes is not significantly affected. It is this contact resistance which often limits the performance of ultrascaled transistors. Moreover, we found that the contact resistance is lowered by the introduction of oxygen treatment. Therefore, high-performance solution-processed nanotube transistors with a 15 nm channel length were obtained by combining a top-gate structure and gate insulators made of a high-dielectric-constant ZrO 2 film. The combination of these elements yields a performance comparable to that obtained with CVD nanotube transistors, which indicates the potential for using solution-processed SWNTs for future aggressively scaled transistor technology.

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Section: Resultsmentioning

confidence: 99%

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

et al. 2012

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“…Recently, there has been a high level of interest in exploring the fundamental science (6-10) and associated devices (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) (19) or diamond/zincblend structures InAs (12) and InGaSb (20)] can be readily mounted on virtually any support substrate, thereby enabling a wide range of novel device concepts and practical applications. In one example system, InAs quantum membranes (QMs) with adjustable thicknesses down to a few atomic layers have been realized by a layer transfer process onto a user-defined substrate (12).…”

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confidence: 99%

Quantum of optical absorption in two-dimensional semiconductors

Fang

Bechtel

Plis

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, A Q = πα/n c for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and n c is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.T he optical properties of heterostructure quantum wells (QWs) have been extensively studied since the 1970s, in GaAs/ AlGaAs (1), GaInAs/AlInAs (2, 3), InGaAs/InP (4), and HgCdTe/ CdTe (5). Here we do a careful quantitative examination of the intrinsic absorption properties of free-standing 2D semiconductor thin films, which has previously been done only for layered structures, such as MoS 2 (6). (The criterion of real two-dimensionality is that the material thickness be smaller than the electron Bohr radius.)Previous work has shown that graphene, a 2D semimetal, has a universal value of light absorption, namely πα, where α is the fine structure constant (7). Here, we use free-standing InAs membranes with exceptionally small thickness as a model material system to accurately probe the absorption properties of 2D semiconductors as a function of thickness. We demonstrate that the magnitude of the light absorption is an integer product of a quantum of absorptance. Specifically, each set of interband transitions between the 2D subbands results in a quantum unit of absorptance of A Q ∼ πα/n c , where n c is the optical local field correction factor. The total absorptance for the first several sets of interband transitions is simply given as A = MA Q , where M is the integer number of allowed transitions for a given photon energy. The result here appears to be universal, except for small correction factors associated with higher bands.Recently, there has been a high level of interest in exploring the fundamental science (6-10) and associated devices (11-20) of free-standing (i.e., attached to a substrate by van der Waals or other weak forces) 2D semiconductors. In one example system, InAs quantum membranes (QMs) with adjustable thicknesses down to a few atomic layers have been realized by a layer transfer process onto a user-defined substrate (12). The approach enables the direct optical absorption studies of fully relaxed (i.e., unstrained) (21) 2D III-V semiconductors by using transparent substrates, without the constraints of the original growth substrate (10). Here, we use InAs membranes of thickness L z ∼ 3-19nm on CaF 2 support substrates as a model material system for examining the absorption properties of 2D semiconduc...

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“…For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure. We demonstrate that wet and dry techniques (17,18) (i.e., transfer in liquid or mediated by a stamp, respectively) yield successful transfer of T2SL membranes with thickness ranging from 100 nm to 2.5 µm, and lateral sizes going from 24 × 24 µm 2 to 1 × 1 cm 2 . We bond InAs/(InAs,Ga)Sb T2SLs to a large variety of hosts, including elastomers and rigid substrates, and both insulating and semiconducting substrates.…”

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“…In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18). Despite the numerous demonstrations of membrane technology applied to III-V semiconductors (18)(19)(20)(21)(22)(23)(24)(25)(26), fabrication and detailed characterization of Sb compounds in membrane form has not been reported. For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure.…”

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Antimonide-based membranes synthesis integration and strain engineering

Zamiri

Anwar

Klein

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

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Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metalcoated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 µm and lateral sizes from 24 × 24 µm 2 to 1 × 1 cm 2 . Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.antimonide | membranes | transfer | infrared | integration E pitaxially grown Sb compounds have recently received increasing attention as functional layers in IR detectors (1-4) and sources (5-9), high-mobility transistors (10-12), resonant tunneling diodes (13-15), and low-power analog and digital electronics (10,16). In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18). Despite the numerous demonstrations of membrane technology applied to III-V semiconductors (18-26), fabrication and detailed characterization of Sb compounds in membrane form has not been reported. For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure. We demonstrate that wet and dry techniques (17, 18) (i.e., transfer in liquid or mediated by a stamp, respectively) yield successful transfer of T2SL membranes with thickness ranging from 100 nm to 2.5 µm, and lateral sizes going from 24 × 24 µm 2 to 1 × 1 cm 2 . We bond InAs/(InAs,Ga)Sb T2SLs to a large variety of hosts, including elastomers and rigid substrates, and both insulating and semiconducting substrates. Electron microscopy and X-ray diffraction (XRD) show that the crystal structure and the strain state of the materials are minimally altered during the release and transfer process. Mechanical modeling establishes that elastic strain up to ∼3.5% can be imparted in nanoscale-thickness AlInSb/InSb/AlInSb membranes by external bending. Finally, we demonstrate the functionality of Sbbased superlattices bonded to Si via photoluminescence (PL) and cha...

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Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Cited by 89 publications

References 28 publications

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

Quantum of optical absorption in two-dimensional semiconductors

Antimonide-based membranes synthesis integration and strain engineering

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