Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

Choi, Sung Jin; Bennett, Patrick; Takei, Kuniharu; Wang, Chuan; Lo, C. C.; Javey, Ali; Bokor, Jeffrey

doi:10.1021/nn305277d

Cited by 85 publications

(56 citation statements)

References 34 publications

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“…CNTs possess similarly large mobility from 10 2 -10 4 cm 2 /Vs depending on fabrication method and the additional benefit of a bandgap for gate modulation with on/off ratios ranging from 10 3 -10 6 . [80][81][82] Although its electrical properties are excellent for charge transport, the inefficient absorption within the one-dimensional body calls for a sensitizing approach. Light induced charge transfer, increased photosensitivity, and reported responsivities up to 10 2 -10 4 A/W have been achieved by combining CNTs with quantum dots [83][84][85] , perovskites 86 , polymers and molecules [87][88][89][90] , and fullerene (C60) 91 .…”

Section: Photo-fetsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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Section: Photo-fetsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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“…4 While serious integration challenges remain, recent successes with gate-all-around geometries and sub-10 nm channel lengths are extremely encouraging. [5][6][7] Although the progress is impressive, the remaining technological barriers and process variation, including difficulty in assembling CNTs with a controlled pitch, imperfect semiconducting purity, on-state current (I on ) variation, threshold voltage (V t ) variation, 8 and contact resistance, 9 still limit the performance. For practical applications in integrated circuits, each transistor must contain multiple CNTs in parallel in order to drive enough on-state current for high-speed switching as illustrated in Fig.…”

mentioning

confidence: 99%

Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

Tulevski²,

Hannon³

et al. 2015

Applied Physics Letters

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“…T he extraordinary electrical properties [1][2][3] of semiconducting single-walled carbon nanotubes (s-SWNTs) make them uniquely attractive for use in logic transistors/circuits [4][5][6][7][8][9][10] , radiofrequency (RF) transistors [11][12][13][14][15][16] , optoelectronic devices [17][18][19] and sensors [20][21][22] . The required horizontally aligned array configurations in SWNTs are possible through chemical vapour deposition (CVD)-based growth on quartz substrates 23,24 .…”

mentioning

confidence: 99%

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

et al. 2014

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Recent progress in the field of single-walled carbon nanotubes (SWNTs) significantly enhances the potential for practical use of this remarkable class of material in advanced electronic and sensor devices. One of the most daunting challenges is in creating large-area, perfectly aligned arrays of purely semiconducting SWNTs (s-SWNTs). Here we introduce a simple, scalable, large-area scheme that achieves this goal through microwave irradiation of aligned SWNTs grown on quartz substrates. Microstrip dipole antennas of low work-function metals concentrate the microwaves and selectively couple them into only the metallic SWNTs (m-SWNTs). The result allows for complete removal of all m-SWNTs, as revealed through systematic experimental and computational studies of the process. As one demonstration of the effectiveness, implementing this method on large arrays consisting of B20,000 SWNTs completely removes all of the m-SWNTs (B7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

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Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

Cited by 85 publications

References 34 publications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

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