Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

Hu, Zhaoying; Tulevski, George S.; Hannon, James B.; Afzali, Ali; Liehr, M.; Park, Hongsik

doi:10.1063/1.4922770

Cited by 13 publications

(8 citation statements)

References 17 publications

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“…As expected, the connection yield for the composite devices increases with the number of trenches. In addition, there is a beneficial effect of averaging on the distribution of the V t variation, as shown in Figure C . Moreover, V t variation is also found to be similar to that of devices made by using polyfluorene-sorted CNTs …”

Section: Resultssupporting

confidence: 57%

Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents

Kumar¹,

Falk²,

Afzali³

et al. 2017

ACS Nano

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High-performance logic based on carbon nanotubes (CNTs) requires high-density arrays of selectively placed semiconducting CNTs. Although polymer-wrapping methods can allow CNTs to be sorted to a >99.9% semiconducting purity, patterning these polymer-wrapped CNTs is an outstanding problem. We report the directed self-assembly of polymer-coated semiconducting CNTs using self-assembled monolayers that bind CNTs into arrays of patterned trenches. We demonstrate that CNTs can be placed into 100 nm wide HfO trenches with an electrical connection yield as high as 90% and into 50 nm wide trenches with a yield as high as 70%. Our directed self-assembly method is an important step forward in pitch scaling.

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Section: Resultssupporting

confidence: 57%

Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents

Kumar¹,

Falk²,

Afzali³

et al. 2017

ACS Nano

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“…CNTs are basically nano-scaled tubes formed by the rolled sheets of graphite and possess high tensile strength, high electrical conductivity and excellent chemical stability [35]. CNTs are the smallest-scale nano-materials that can be observed only by a transmission electron microscope (TEM) [36,37]. CNTs are classified as either single-walled (SWCNT), which consist of a single nanotube, or multi-walled (MWCNT), which are made up of multiple nanotubes with inter-layer spacing of 0.34 nm.…”

Section: A Brief On Carbon Nanotube Field Effect Transistors (Cntfets)mentioning

confidence: 99%

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

et al. 2021

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Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integration is considered as a possible technology option. CNTFETs are currently being preferred for implementing ternary circuits due to their desirable multiple threshold voltage and geometry-dependent properties, whereas the RRAM is used due to its multilevel cell capability which enables storage of multiple resistance states within a single cell. This article presents the 2-trit arithmetic logic unit (ALU) design using CNTFETs and RRAM as the design elements. The proposed ALU incorporates a transmission gate block, a function select block, and various ternary function processing modules. The ALU design optimization is achieved by introducing a controlled ternary adder–subtractor module instead of separate adder and subtractor circuits. The simulations are analyzed and validated using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions (supply voltages) to test the robustness of the designs. The simulation results indicate that the proposed CNTFET-RRAM integration enables the compact circuit realization with good robustness. Moreover, due to the addition of RRAM as circuit element, the proposed ALU has the advantage of non-volatility.

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“…orientation comprising carbon atoms from only one sub-lattice of the bipartite hexagonal lattice are predicted to host magnetic order [6,7]. Carbon nanotubes attracted much attention due to its possible applications for nanoscale electronic devices [8,9] like ballistic transport [10][11][12], high-performance field-effect transistors [13][14][15][16][17] and logic devices [18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Circumferential confinement consequence on the magnetic properties of a punctured nanotube in the presence of an axial electric field

Ghasemifard

Sharifian

Faizabadi

2020

J. Phys.: Condens. Matter

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In this paper, we present magnetic properties of a finite graphene sheet with a triangle punctured vacancy, and its counterpart single-wall carbon nanotube as a rolled-up graphene sheet in the framework of the Hubbard model in the presence of an axial electric field, in order to form a comparison study between these two graphene samples. We have noticed that the tight-binding part of the Hamiltonian consists of two types of zero-energy states in the case of the graphene sheet, the strict zero-energy states, and the quasi zero-energy states. The first type takes part in a ferromagnetic coupling between the triangle edges and one edge of the rectangle graphene sheet, while the latter one has an antiferromagnetic alignment with the opposite edge of the rectangle graphene sheet. Involving the Coulomb interaction through Hubbard term, we have observed that the slope of the cluster edge states in nanotube is higher than the graphene sheet. Additionally, spin-depolarization happens in single-wall nanotube sooner than the graphene sheet by slightly increasing an axial electric field. Also, the graphene sheet is more robust than the single wall nanotube at low electric fields.

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Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors

Abstract: Park, H. (2015). Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors.

Cited by 13 publications

References 17 publications

Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents

Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Circumferential confinement consequence on the magnetic properties of a punctured nanotube in the presence of an axial electric field

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