Nanoscale memory devices

Chung, A.; Deen, M. Jamal; Lee, Jeong-Soo; Meyyappan, M.

doi:10.1088/0957-4484/21/41/412001

Cited by 108 publications

(61 citation statements)

References 124 publications

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“…[1][2][3] Accordingly, the International Technology Roadmap for Semiconductors (ITRS) has recently completed an assessment of eight memory technologies among the emerging research devices (ERDs) and recommended that Redox RAM [4][5][6][7] and STT-MRAM [ 8 , 9 ] (spin-transfer torque magnetic RAM) receive additional focus in research and development. [ 1 ] Redox RAM is one type of memristor [10][11][12][13][14][15] that has shown more than adequate scalability, non-volatility, multiplestate operation, 3D stackability, and complementary metaloxide semiconductor (CMOS) compatibility.…”

mentioning

confidence: 99%

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

et al. 2011

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mentioning

confidence: 99%

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

et al. 2011

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“…For solid state memories (CMOS Flash memories) there are also several scaling-imposed limitations on achievable densities, such as reduced floating gate coupling, electrostatic interaction between adjacent cells, limits to the tunnel oxide thickness, patterning requirements exceeding available lithographic resolution etc. (see for example [5]). …”

Section: Introductionmentioning

confidence: 98%

Scanning probe memories – Technology and applications

Wright

Aziz

Shah

et al. 2011

Current Applied Physics

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a b s t r a c tScanning probe-based memories have demonstrated their ability to store data at ultra-high densities, well in excess of 1 Tbit/sq.in.. In addition they offer the capability for relatively fast writing and reading, in excess of 1 Mbit/second/tip, combined with very low energy consumption (a few pico Joules of writing energy per bit). Thus, scanning probe-based technology would seem to offer an attractive route for the provision of ultra-compact, ultra-high density, ultra-low power memories. In this paper we discuss the three major families of probe storage: (i) probe storage using thermo-mechanical (and purely mechanical) write/read in polymer media; (ii) probe storage using electrical writing (and various readout methods) in ferroelectric media; (iii) probe storage using electro-thermal writing and electrical reading in phase-change media. We discuss the physical principles behind the writing and reading methods in each case, as well as media and (probe) tip design and fabrication issues. We also review very briefly some of the potential application areas for probe storage.

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“…Non-volatile flash memories face downscaling difficulty in the future due to the intrinsic limitation of both transistors and floating gate [1]. Resistive memory has been identified as one of the most promising alternative memory devices which could replace flash memories in the future.…”

Section: Introductionmentioning

confidence: 99%

Amorphous SiC resistive memory with embedded Cu nanoparticles

Fan

Jiang

Wang

et al. 2017

Microelectronic Engineering

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Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/aSiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 10 7 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.

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Nanoscale memory devices

Cited by 108 publications

References 124 publications

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

Scanning probe memories – Technology and applications

Amorphous SiC resistive memory with embedded Cu nanoparticles

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