Nanoscale selective growth of GaAs by molecular beam epitaxy

Lee, Seung-Chang; Malloy, K.J.; Brueck, S. R. J.

doi:10.1063/1.1401805

Cited by 47 publications

(36 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In all cases, the total GaAs volume deposited in the mask openings is considerably smaller than the estimated volume of a continuous GaAs layer on a mask-free GaAs surface using the same deposition time, indicating that not all Ga adatoms impinging on the SiO 2 areas migrate to the mask openings. According to the estimated volume of GaAs islands deposited at 630°C on a continuous SiO 2 film a sticking coefficient of Ga atoms on SiO 2 of ∼0.13 was estimated [17]. A more recent study found a value of ∼0.007 at 632°C and confirmed the expected exponential dependence on the inverse absolute temperature [20].…”

Section: Theoretical Descriptionsupporting

confidence: 54%

“…Regarding the morphology of the GaAs islands selectively grown in circular mask openings it has been found that the height as well as the shape of the islands varies with the diameter of the openings [17]. With decreasing opening diameter the island height increases, because of the larger mask area and related increased number of Ga atoms diffusing from the mask to the GaAs surface (Figure 4(a)).…”

Section: Theoretical Descriptionmentioning

confidence: 97%

“…In the vicinity of the substrate-mask boundary a gradient of the surface potential occurs, which provides the driving force for diffusion of adatoms from the mask to the substrate [16,17]. The potential gradient also prevents the adatoms to diffuse in reverse direction, i.e.…”

Section: Theoretical Descriptionmentioning

confidence: 99%

See 2 more Smart Citations

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

View full text Add to dashboard Cite

In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

show abstract

Section: Theoretical Descriptionsupporting

confidence: 54%

Section: Theoretical Descriptionmentioning

confidence: 97%

See 1 more Smart Citation

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

View full text Add to dashboard Cite

show abstract

“…Recent progress in lithography technology and its application to molecular beam epitaxy and metalorganic vapor-phase epitaxy (MOVPE) has made accessible a new regime of growth-nanoscale patterned growth and nano-heteroepitaxy [11,12]. In this work, we address the issue of phase instability with a nanoscale patterning technique.…”

Section: Introductionmentioning

confidence: 99%

Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

Lee

Sun

Hersee

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The other sort of approach relies on nanoscale selective area epitaxy (NSAE) on a prepatterned substrate or growth template. The nanopatterning of substrates/templates can be realized by a variety of lithographic or nonlithographic techniques, such as interference lithography, [13,14] anodic oxidation of aluminum to form nanoporous alumina, [15][16][17][18] nanosphere lithography, [19] focused ion beam sputtering, [20] and electron-beam lithography (EBL). [21][22][23][24] At present, state-of-the-art EBL allows the creation of patterns with versatile physical geometry and localization, and homogeneous, tunable size.…”

mentioning

confidence: 99%

Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Chen

Chua

et al. 2007

Advanced Materials

View full text Add to dashboard Cite

Low-dimensional semiconductor structures, such as quantum dots (QDs), give rise to new physical phenomena that have been applied in optoelectronic and electronic devices, for example, QD laser diodes [1] and single-electron transistors. [2] To date, the formation of semiconductor dots on the nanometerscale is mostly controlled by the Stranski-Krastanow (S-K) growth mode, [3] where the self-organized formation of nanoislands is driven by the strain energy in large-lattice-mismatch systems. An alternative technique to form semiconductor QDs is by droplet expitaxy, which relies on the self-assembly of liquid metal nanoparticles of group III atoms and their crystallization into III-V semiconductor QDs by a subsequent supply of group V atoms. [4][5][6] In the self-organized processes described above, random distribution of the QD sizes and locations usually occurs, [7] which limits the benefits from low-dimensional structures. Usually, the dynamics of exciton decay are found to be monoexponential and the emission from a single dot should be very narrow. However, the disorder of the QD system governs the recombination dynamics to give a nonexponential photoluminescence (PL) decay of the entire QD ensemble.[8] Furthermore, the disorder also produces many problems in continuous wave (cw) PL experiments, in which the width of the emission spectra reflects the inhomogeneous broadening owing to the dispersion of both dot sizes and locations. One should be extremely careful when using the cw PL technique to measure unambiguously the energy and the linewidth of light emission from the QD system. [9] To obtain nanodots with homogeneous size and controlled positioning, various methods have been carried out to promote nucleation at expected sites. These methods can be divided into two categories in principle. The first is by surfacestate control, [10][11][12] such as by self-organized anisotropic strain engineering, [10] by using vertical elastic interaction in QD superlattices, [11] by ion sputtering-induced surface instability, [12] and so forth. Locally ordered nanodot arrays were produced by these methods. The other sort of approach relies on nanoscale selective area epitaxy (NSAE) on a prepatterned substrate or growth template. The nanopatterning of substrates/templates can be realized by a variety of lithographic or nonlithographic techniques, such as interference lithography, [13,14] anodic oxidation of aluminum to form nanoporous alumina, [15][16][17][18] nanosphere lithography, [19] focused ion beam sputtering, [20] and electron-beam lithography (EBL). [21][22][23][24] At present, state-of-the-art EBL allows the creation of patterns with versatile physical geometry and localization, and homogeneous, tunable size. Rigorously aligned InAs/GaAs nanodot arrays with a standard deviation of less than 5 % for both dot diameter and height were achieved by molecular beam epitaxy (MBE) on an EBL-patterned GaAs substrate.[23] Well-resolved excited states of the homogeneous QDs were observed by power-dependent PL measurements. [24]...

show abstract

Nanoscale selective growth of GaAs by molecular beam epitaxy

Cited by 47 publications

References 19 publications

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Contact Info

Product

Resources

About