Nanoscale Transistors: Physics and Materials

Abstract

We analyze a modern-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as high-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.Mater. Res. Soc. Symp. Proc. Vol. 958

Lessons of Nanoelectronics: Current Generation, Ohm’s Law Formulation and Conduction Modes in «bottom–up» Approach

“…Таким чином, тепло, що виділяється при проходженні струму по пружному резисто-ру, розсіюється на контактах, чому вже є до-статньо експериментальних підтверджень на нано-і мезорозмірних провідниках [16]. При-вабливість моделі пружного резистора полягає в тому, що механічні і термодинамічні процеси вперше були просторово розділені.…”

Compact Modeling of Ballistic Nanowire MOSFETs

“…2, and that T i (E) = 0 otherwise. Thus, (2) is evaluated with the use of (3) [1], such that we have (4), shown at the bottom of the page, where…”

“…4. Substituting (10) and (11) into (9), we obtain [1] the following (a similar expression is discussed in [4])…”

“…However, the physics of the operation of nanowire MOSFETs is not necessarily well discussed in most of the analyses. Reference [4] presents a plain and simple picture of some aspects of the nanowire MOSFET.…”

Scaling in Quantum Transport in Silicon Nano-Transistors

“…We start from a one-dimensional effective model assuming ballistic transport (for a review see Ref. [9] and more recently Ref. [10]).…”