Nanoscale Vacuum Channel Transistor

Han, Jin−Woo; Moon, Dong‐Il; Meyyappan, M.

doi:10.1021/acs.nanolett.6b04363

Cited by 169 publications

(99 citation statements)

References 31 publications

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“…However, only after the successful demonstration of MOSFET analogous nanoscale vacuum‐channel transistor operating in air by Han et al, it received significant attention. Figure highlights the details of experimental and theoretical demonstrations of field emission at atmospheric temperature and pressure till date . Furthermore, Table highlights the comparison of performance parameters for both field emission and transistor parameters (where applicable).…”

Section: From Vacuum To Air Medium For Electron Field Emissionmentioning

confidence: 99%

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Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

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Artificial intelligence platforms, high-speed computation, and data handling systems increasingly need energy-efficient systems. Electron emission was fundamental to the development of transistors and electronics over seven decades ago. This technology has a renewed emergence and includes implications in diverse fields ranging from electronics, telecommunication, defense, space exploration, medical science, and material science to televisions and displays. For such a vital field, a critical review of theories, current research directions, applications, and future prospects is invaluable. Herein, the ongoing research directions adopted to enhance the emitter performance are reviewed and the relative degree of their success is compared. This is supported by an overview of key electron emission, transport mechanisms, and ways to tune a particular mechanism for energy-efficient applications. The diverse range of applications in this field, with a particular focus on electronics, is outlined. Exciting current developments in electron field emission that could revolutionize the electronic industry with a resurgence of nanoscale field emission transistor in the air medium are also discussed. Figure 2. Representation of different electron emission mechanisms: a) Comparison of thermionic emission, Schottky emission, FN tunnelling, and direct tunnelling with schematic energy band diagram. b) Typical thermionic emission plot. c) Typical Schottky plot. (b,c)Reproduced with permission. [3]

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Section: From Vacuum To Air Medium For Electron Field Emissionmentioning

confidence: 99%

Section: From Vacuum To Air Medium For Electron Field Emissionmentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

Self Cite

View full text Add to dashboard Cite

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“…The nature of vacuum channels enables the devices to function at elevated temperatures and radiation levels. A variety of structures in building vacuum channel transistors have been proposed in recent years [4][5][6][7][8][9][10][11][12][13][14], although vacuum transistors were first proposed to build circuits a few decades ago [15]. Generally, if the transport distance of a field emission (FE) is greater than the submicroscale, a vacuum condition is required to prevent carrier scattering, due to collision with moving particles in an ambient environment, and to achieve ballistic transport [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Vertical Field Emission Air-Channel Diodes and Transistors

2019

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Vacuum channel transistors are potential candidates for low-loss and high-speed electronic devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale transport distance is smaller than the mean free path (MFP) in atmospheric pressure, a transistor can work in air owing to the immunity of carrier collision. The nature of a vacuum channel allows devices to function in a high-temperature radiation environment. This research intended to investigate gate location in a vertical vacuum channel transistor. The influence of scattering under different ambient pressure levels was evaluated using a transport distance of about 60 nm, around the range of MFP in air. The finite element model suggests that gate electrodes should be near emitters in vertical vacuum channel transistors because the electrodes exhibit high-drive currents and low-subthreshold swings. The particle trajectory model indicates that collected electron flow (electric current) performs like a typical metal oxide semiconductor field effect-transistor (MOSFET), and that gate voltage plays a role in enhancing emission electrons. The results of the measurement on vertical diodes show that current and voltage under reduced pressure and filled with CO2 are different from those under atmospheric pressure. This result implies that this design can be used for gas and pressure sensing.

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“…The emitted electrons can be used for a number of important applications including field emission displays, X‐ray spectroscopy sources, harsh environment electronics, and high‐speed electronics . The combination of ballistic conduction through a vacuum channel, the inherently fast emission process, and the ability to operate at high temperatures has made field emission a topic of intense interest for two decades . Additionally, field emission devices are particularly relevant for space‐based applications because of their resilience in high radiation and high temperature environments .…”

Section: Introduction and Motivationsmentioning

confidence: 99%

Field Emitters Using Inverse Opal Structures

Jones

Zhang

Murty

et al. 2019

Adv Funct Materials

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Electronics to be used in space must often perform in high temperature or radiation hard environments that render conventional solid-state technologies unable to meet mission requirements. As a result, microscale and nanoscale field emission devices are being explored as fundamental components of electronics capable of operating in these harsh environments. Wide scale implementation of these devices is hindered by the difficulty of fabricating large, mechanically stable, uniform arrays of sharp emitting tips. This work presents a scalable method to produce uniform arrays of field emitting tips. Polystyrene spheres are applied as a template for electrochemical deposition. An electrochemical etching process is developed to sharpen tips to a radius of curvature of 5-10 nm, optimizing them for field emission applications. The flexibility of the fabrication process allows for device optimization in terms of tip geometry, density, and constituent material to achieve high field enhancement factors, exceeding 100. Miniaturized field emitting diode and gated triode devices are fabricated. Finally, the electrochemically deposited material is used as a scaffold for the deposition of a refractory, low work function emitting layer, and the hybrid cathode is characterized as a field emitter at temperatures up to 300 ºC.

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Nanoscale Vacuum Channel Transistor

Cited by 169 publications

References 31 publications

Electron Emission Devices for Energy‐Efficient Systems

Electron Emission Devices for Energy‐Efficient Systems

Vertical Field Emission Air-Channel Diodes and Transistors

Field Emitters Using Inverse Opal Structures

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