The
Cu(In,Ga)Se2 (CIGS) thin film solar cell is a promising
material architecture considering its high photovoltaic (PV) efficiency
at low material cost. Recently, the authors demonstrated all laser
based mini-module fabrication on a transparent conducting oxide (TCO)
based CIGS architecture, using a cost-effective nanosecond laser beam
illuminated from the transparent glass substrate side. While indium
tin oxide (ITO) is a promising TCO to this end, allowing ohmic contact
with CIGS and low sheet resistance, it suffers from unwanted damage
upon laser scribing based on its preferred thickness of ∼200
nm. Therefore, in this study, we investigate the effect of laser beam
size and shape on ITO damage during P2 laser scribing. Although use
of an enlarged laser spot could mitigate the damage issue, larger
scribing width increased the dead zone. Thus, we have implemented
the elliptical laser beam shaping technology so that a longer beam
axis can suppress the ITO damage also maintaining high scribing speed
while a shorter beam axis dictates narrow scribing width. Based on
theoretical and numerical analyses, the ITO damage free scribing trend
by enlarged laser beam, at least along one laser beam axis, is attributed
to the buckling mechanism that facilitates film failure by enlarged
laser beam. Transient thermo-mechanical modeling results imply that
larger laser beam induced thermal stress will reach the film failure
threshold earlier within laser pulse duration at lower interfacial
temperature. However, further time-resolved experimental investigations
are necessary to find the exact film delamination timing in conjunction
with possible contribution of a microexplosion mechanism.