Nanosecond single-photon timing with InGaAs/InP photodiodes

Zappa, Franco; Lacaita, A.L.; Cova, S.; Webb, P.P.

doi:10.1364/ol.19.000846

Cited by 25 publications

(17 citation statements)

References 5 publications

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“…Photosensitive devices such as photodetectors in long-wavelength optical fiber communication systems [1,2] and high-efficiency solar cells with multi-junction structures [3] are excellent examples of technologies that utilize the superb optical properties of InP-based systems. With the aforementioned devices, however, surface reflection is a serious problem that degrades the device performance because is reduces the efficiency of photon energy conversion [4].…”

Section: Introductionmentioning

confidence: 99%

Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells

2010

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Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.Keywords: Indium Phosphide, porous structure, surface reflectance, photoelectrochemical solar cellauthor. E-mail: taketomo@rciqe.hokudai.ac.jp (Taketomo Sato). IntroductionIndium phosphide and related materials have attracted attention over the years as effective materials for high-speed electronics and optoelectronic devices. Photosensitive devices such as photodetectors in long-wavelength optical fiber communication systems [1,2] and high-efficiency solar cells with multi-junction structures [3] are excellent examples of technologies that utilize the superb optical properties of InP-based systems. With the aforementioned devices, however, surface reflection is a serious problem that degrades the device performance because is reduces the efficiency of photon energy conversion [4]. Surface texturing of V-grooves [5][6][7], formation of insulator films [8], wide bandgap semiconductor films [9], and transparent conducting oxide films [10] have been investigated as anti-reflective layers on top of InP. However, most of these techniques exhibit minimum reflectance values as low as 2-10% and satisfactory anti-reflective performance only in a limited wavelength range.In this letter, we report that extremely low reflectance below 0.4% was observed from the InP porous nanostructures in UV, visible, and near-infrared ranges. Our porous structures are electrochemically formed using a very simple setup at extremely low cost. The surface reflectance spectroscopy was systematically carried out on various porous samples, leading to finding that the reflectance strongly depended on the surface morphology and the pore depth. Photoelectrochemical measurements on the porous structures revealed that the photocurrents increased in the samples that had low reflectance surfaces with deeper pores.

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Section: Introductionmentioning

confidence: 99%

Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells

2010

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“…For this reason, extensive investigations have been carried out on germanium and ffl-V APD's. 4 Recently we have demonstrated that germanium APD's cooled at 77K can work in the so-called Geiger-mode, achieving single photon sensitivity with a Noise Equivalent Power (NEP) of 8.10b6 Wi'%JHz at 1.3pm-wavelength and featuring an equivalentbandwidth of 1.8GHz.5…”

Section: Arrays For Single Photon Detection In the Near Infraredmentioning

confidence: 99%

<title>Germanium quad-cell for single-photon detection in the near infrared</title>

et al. 1995

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We report the first results obtained with a germanium quad-cell sensor operated in Geiger-mode regime. After a quantitative characterization of the single pixel, both in counting and in timing applications, we quantitatively assess the intensity of the optical coupling among the detectors of the cell due to secondary photon emission from hot carriers. This effect, intrinsically related to Geiger-mode operation, has been overcome by sequentially driving the pixels of the cell. A preliminary test demonstrates the tracking capabilities of the sensor. Since the single pixel can detect the arrival time of the photon with a precision better than lOOps FWHM arrays of such devices could be also employed in wavelength and timing resolved luminescence measurements in the near-infrared.Arrays of photodetectors are increasingly required in many applications,1 ranging from x-ray and infrared imaging2 to sateffite tracking, adaptive optics for astronomy,3 wavelength and time-resolved luminescence measurements for biochemistry, just to name a few. Moreover, the availability of solid state laser sources at wavelengths longer than 1pm are pushing the demand for fast and sensitive photodetectors in this wavelength range, beyond the sensitivity cut-off of silicon devices. For this reason, extensive investigations have been carried out on germanium and ffl-V APD's.4 Recently we have demonstrated that germanium APD's cooled at 77K can work in the so-called Geiger-mode, achieving single photon sensitivity with a Noise Equivalent Power (NEP) of 8.10b6 Wi'%JHz at 1.3pm-wavelength and featuring an equivalentbandwidth of 1.8GHz.5A Geiger-mode APD is operated biased above the breakdown voltage, B• At this bias, as soon as a photon is absorbed in the detector volume, the photogenerated pair triggers a macroscopic avalanche current. A fast discriminator senses the avalanche signal and provides a standard output pulse for counting and timing measurements. A suitable electronic circuit quenches the avalanche by lowering the bias close to or below VB and, after a hold-off time, restores the bias above VB in order to make possible the detection of another photon. Due to their single photon sensitivity, these devices are also called Single Photon Avalanche Diodes (SPAIYs).The key feature which makes SPAD's interesting is that the detector responds to a single photon with a macroscopic current pulse well above the noise level of the following electronics. While sensitivity of analog detectors is impaired by the electronic noise as soon as the signal frequency increases, SPA]Ys feature very low NEP not only in measurements of continuos signals but also of very fast optical vaweform. Presently available germanium SPAD's do not reach the sensitivity of CCD's or p-i-n photodiodes in the detection of near-infrared continuos signals, but they become competitive as soon as the signal frequency moves beyond 100Hz.5 The noise of SPAD's is due to the so-called dark-counting rate, which is the avalanche rate due carriers generated by thermal activation, tunn...

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“…Specifically, larger avalanche signals correspond to larger amounts of charge, which populates more traps within the SPAD and increases the afterpulsing [114,146]. Specifically, larger avalanche signals correspond to larger amounts of charge, which populates more traps within the SPAD and increases the afterpulsing [114,146].…”

Section: Introductionmentioning

confidence: 99%