Nanoseconds Switching for High Voltage Circuit using Avalanche Transistors

Tamuri, Abd. Rahman; Bidin, Noriah; Daud, Yaacob Mad

doi:10.5539/apr.v1n2p25

Cited by 16 publications

(6 citation statements)

References 9 publications

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“…The high voltage drivers based on the MOSFETs connected in series provide the laser beam modulation frequency up to 1 MHz with the 30 ns rise/fall time of pulse and adjustable pulse width [22][23][24][25][26][27]. The bipolar avalanche high voltage drivers allow us to achieve rise time from 7 ns down to 240 ps [28][29][30][31][32][33][34][35]. However, the fall time of the pulse generated by the bipolar avalanche high voltage drivers may be 10 times longer than the rise time of the pulse.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Sinkevičius

Bielskis

2019

Crystals

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The piezoelectric ringing phenomenon in Pockels cells based on the beta barium borate crystals was analyzed in this work. The investigation results show that piezoelectric ringing is caused by multiple high voltage pulses with a frequency in the range from 10 kHz up to 1 MHz. Experimental investigation of frequency response and Discrete Fourier transformation was used for analysis. The method of piezoelectric ringing investigation based on the analysis of difference of real and simulated optical signals spectrums was proposed. The investigations were performed for crystals with 3 × 3 × 25 mm, 4 × 4 × 25 mm and 4 × 4 × 20 mm dimensions. It was estimated that piezoelectric ringing in the beta barium borate crystal with dimensions of 3 × 3 mm × 25 mm occurred at the 150, 205, 445, 600 and 750 kHz frequencies of high voltage pulses.

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Section: Introductionmentioning

confidence: 99%

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Sinkevičius

Bielskis

2019

Crystals

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“…Avalanche bipolar transistors are usually combined with a Marx generator topology and feature a very short rising edge of high voltage pulse from 7 ns down to 240 ps (Krishnaswamy et al 2007;Xuelin et al 2010;Oak et al 1991;Tamuri et al 2009;Rai et al 1994;Dharmadhikari et al 1996;Ding et al 2015;Bishop et al 2006;Nunnally et al 2011;Gao et al 2017;Shen et al 2020;Yan et al 2020;Rao et al 2019;). An overview of the evolution of this topology is provided in one of the articles (Li et al 2018).…”

Section: Overview Of the Principle And Problems Of Pockels Cellsmentioning

confidence: 99%

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Sinkevičius¹

2021

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Vilnius, 2021 Disertacija rengta 2017-2021 metais Valstybiniame mokslinių tyrimų institute Fizinių ir technologijos mokslų centre. Vadovas prof. dr. Algirdas BAŠKYS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, elektros ir elektronikos inžinerija -T 001). Vilniaus Gedimino technikos universiteto elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. dr. Dalius NAVAKAUSKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001). Nariai: doc. dr. Aidas MATIJOŠIUS (Vilniaus universitetas, fizika -N 002), prof. dr. Jurij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001), dr. Iouliia SKLIAROVA (Aveiro universitetas, Portugalija, elektros ir elektronikos inžinerija -T 001), prof. dr. Algirdas SUŽIEDĖLIS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, fizika -N 002). Disertacija bus ginama viešame Elektros ir elektronikos mokslo krypties disertacijos gynimo tarybos posėdyje 2021 m. lapkričio 9 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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“…Pulsa-pulsa ini memicu rangkaian Schmitt trigger kecepatan tinggi yang telah diatur pada lebar pulsa variabel hingga 75 nanodetik aras tegangan non-TTL +18 V. Gambar 1 memperlihatkan rangkaian lengkap keseluruhan tahap pembangkitan pulsa dan bentuk konversi pulsa pada setiap tahap rangkaian [11,12]. Garis putus-putus adalah rangkaian pembangkit pulsa yang dikaji pada makalah ini untuk menggerakkan MOSFET tegangan tinggi di tahap berikutnya.…”

Section: Metode Penelitianunclassified

Pembangkit Pulsa Orde Nano/Mikro-Detik untuk Pemicu Transduser Ultrasonik

Hidayat

Simatupang

Suhendi

et al. 2018

JIIF

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Abstrak. Pulsa dengan lebar sempit (orde nano-hingga mikro-detik) banyak diperlukan untuk berbagai aplikasi, seperti teknologi pengolahan pangan, pembangkitan plasma, pemicu transduser ultrasonik frekuensi tinggi, elektroporasi dan sebagainya. Makalah ini melaporkan hasil rancang bangun oleh grup riset kami pembangkit pulsa dengan lebar hingga 75 nanodetik untuk digunakan sebagai pemicu transduser ultrasonik 1 Mhz. Pulsa level TTL dibangkitkan dari sebuah astable multivibrator (NE555) dengan pengaturan interval antar-pulsa variabel hingga satu mikrodetik. Selanjutnya, tepi positif pulsa tersebut memicu rangkaian Schmitt trigger (SN74121) yang diatur pada mode kerja oneshot multivibrator dengan lebar pulsa orde ~75 nanodetik. Sebuah Schmitt trigger kedua (MC33151) yang bekerja pada tegangan catu daya +18 V mengubah level tegangan TTL menjadi +18 V guna mengaktifkan saklar tegangan tinggi pada tingkat berikutnya. Hasil pengujian menunjukkan generator dapat membangkitkan pulsa repetitif tegangan +18 V dengan lebar pulsa variabel hingga 75 nanodetik. Hasil ini menyimpulkan bahwa sistem yang dibangun dapat membangkitkan pulsa sesuai dengan rancangan.Kata kunci : generator pulsa, lebar pulsa, nanodetik, multivibrator, Schmitt trigger Abstract. Nano-to-millisecond order high-voltage pulse generators are necessary in the wide range of applications, including ultrasonic wave generation, medical and biological researches such as medical imaging and chemical-free bacterial remediation, etc. This paper reports the generation of repetitive nanosecond adjustable pulse width pulses for the excitation of a 1-MHz ultrasonic transducer. An astable multivibrator (NE555) generated TTL pulses up to one microsecond repetition interval. The positive edges of generated pulses triggered the next inverting Schmitt trigger circuit (SN74121) which set as a one-shot multivibrator adjusted at 75 nanosecond TTL pulse width. The second inverting Schmitt trigger circuit (MC33151) converted these TTL pulses into +18 V non-TTL pulses for driving the final high voltage MOSFET gate. The test results showed the integrated-circuit enable to generate repetitive +18 V pulses with up to 75 nanosecond adjustable pulse width.

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Nanoseconds Switching for High Voltage Circuit using Avalanche Transistors

Cited by 16 publications

References 9 publications

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Pembangkit Pulsa Orde Nano/Mikro-Detik untuk Pemicu Transduser Ultrasonik

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